DISPLAY DEVICE AND THE MANUFACTURING METHOD OF THE SAME

• US 20170077149A1
• Filed: 11/02/2016
• Published: 03/16/2017
• Est. Priority Date: 03/17/2014
• Status: Abandoned Application

• Current Assignee: Japan Display Incorporated
• Original Assignee: Japan Display Incorporated
• Inventors: UEMURA, Norihiro, SUZUMURA, lsao, MIYAKE, Hidekazu, YAMAGUCHI, Yohei
• Application Number:
  US15/341,041
• Publication Number:
  US 20170077149A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G02F 1/133302 Rigid substrates, e.g. inorganic substrates
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/134309 characterised by their geometrical arrangement
• CPC Class Codes: G02F 1/134372 for fringe field switching [FFS] where the common electrode is not patterned
• CPC Class Codes: G02F 1/136209 Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 59/126 Shielding, e.g. light-blocking means over the TFTs
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals

Abstract

Provided are a reliable high performance thin film transistor and a reliable high performance display device. The display device has: a gate electrode which is formed on a substrate; a gate insulating film which is formed to cover the substrate and the gate electrode; an oxide semiconductor layer which is formed on the gate electrode through the gate insulating film; a channel protective layer which is in contact with the oxide semiconductor layer and formed on the oxide semiconductor layer; and source/drain electrodes which are electrically connected to the oxide semiconductor layer and formed to cover the oxide semiconductor layer. A metal oxide layer is formed on an upper part of the channel protective layer. The source/drain electrodes are formed to be divided apart on the channel protective layer and the metal oxide layer.

Claims

1-28. -28. (canceled)

29. A display device comprising:

a gate electrode formed on a substrate;

a gate insulating film formed to cover the gate electrode;

an oxide semiconductor layer formed on the gate electrode via the gate insulating film;

a first insulating film in contact with a channel of the oxide semiconductor layer and formed on the oxide semiconductor layer; and

source/drain electrodes electrically connected to the oxide semiconductor layer and formed to cover the oxide semiconductor layer,

wherein a light shielding layer using a metal is formed on the protective layer corresponding to the channel, and

wherein the light shielding layer has a thickness between 50 nm and 200 nm.

30. The display device according to claim 29, wherein the source/drain electrodes contact with the first insulating film.

31. The display device according to claim 29, wherein the light shielding layer is formed of any oxide of or alloy oxide in combination with titanium, molybdenum, aluminum, chromium, copper, tungsten, zirconium, tantalum, silver, and manganese.

32. The display device according to claim 29, wherein the oxide semiconductor layer includes any of In—

Ga—

Zn—

O, In—

Al—

Zn—

O, In—

Sn—

Zn—

O, In—

Zn—

O, In—

Sn—

O, Zn—

O, and Sn—

O, as a main component.

33. The display device according to claim 29, wherein the first insulating film is formed of silicone oxide.

34. The display device according to claim 29, wherein the substrate is a glass substrate, and a silicon nitride film is formed between the substrate and the gate electrode such that the substrate and the gate electrode are not in direct contact with each other.

35. The display device according to claim 29, wherein the first insulating film includes a contact hall, and

wherein the source/drain electrodes contacts through the contact hall.

36. The display device according to claim 29, wherein the display device is a liquid crystal display device in an FFS (Fringe Field Switching) mode for driving liquid crystal molecules using a fringe electric field.

37. The display device according to claim 29, wherein the display device is an organic EL display device in which organic light-emitting diodes are used as light emitting devices.

38. A display device comprising:

a gate electrode formed on a substrate;

a gate insulating film formed to cover the gate electrode;

an oxide semiconductor layer formed on the gate electrode via the gate insulating film;

a first insulating film in contact with a channel of the oxide semiconductor layer and formed on the oxide semiconductor layer; and

source/drain electrodes electrically connected to the oxide semiconductor layer and formed to cover the oxide semiconductor layer,

wherein a light shielding using a metal layer is formed on the protective layer corresponding to the channel, and

wherein the light shielding layer is for shielding entrance of external light to the oxide semiconductor layer.

39. The display device according to claim 38, wherein the source/drain electrodes contact with the first insulating film.

40. The display device according to claim 38, wherein the light shielding layer is formed of any oxide of or alloy oxide in combination with titanium, molybdenum, aluminum, chromium, copper, tungsten, zirconium, tantalum, silver, and manganese.

41. The display device according to claim 38, wherein the oxide semiconductor layer includes any of In—

Ga—

Zn—

O, In—

Al—

Zn—

O, In—

Sn—

Zn—

O, In—

Zn—

O, In—

Sn—

O, Zn—

O, and Sn—

O, as a main component.

42. The display device according to claim 38, wherein the first insulating film is formed of silicone oxide.

43. The display device according to claim 38, wherein the substrate is a glass substrate, and a silicon nitride film is formed between the substrate and the gate electrode such that the substrate and the gate electrode are not in direct contact with each other.

44. The display device according to claim 38, wherein the first insulating film includes a contact hall, and

wherein the source/drain electrodes contacts through the contact hall.

45. The display device according to claim 38, wherein the display device is a liquid crystal display device in an FFS (Fringe Field Switching) mode for driving liquid crystal molecules using a fringe electric field.

46. The display device according to claim 38, wherein the display device is an organic EL display device in which organic light-emitting diodes are used as light emitting devices.