TRANSFER-FREE METHOD FOR FORMING GRAPHENE LAYER

• US 20170081782A1
• Filed: 09/22/2016
• Published: 03/23/2017
• Est. Priority Date: 09/22/2015
• Status: Active Grant

• Current Assignee: Kuk-Il Graphene Co., Ltd.
• Original Assignee: The Industry & Academic Cooperation In Chungnam National University
• Inventors: Yoon, Soon-Gil, Park, Byeong-Ju
• Granted Patent: US 10,246,795 B2
• Time in Patent Office: Days
• CPC Class Codes: C03C 17/3634 one layer at least containing carbon, a carbide or oxycarbide
• CPC Class Codes: C03C 17/3649 made of metals other than silver
• CPC Class Codes: C23C 16/0218 in a reactive atmosphere C23C16/0227 takes precedence
• CPC Class Codes: C23C 16/0281 of metallic sub-layers C23C16/029 takes precedence
• CPC Class Codes: C23C 16/26 Deposition of carbon only
• CPC Class Codes: C30B 25/165 the flow of the reactive gases
• CPC Class Codes: C30B 25/186 being specially pre-treated by, e.g. chemical or physical means
• CPC Class Codes: C30B 29/02 Elements

Abstract

The present invention relates to a transfer-free method for forming a graphene layer, in which a high-quality graphene layer having excellent crystallinity can be easily formed over a large area at low temperature by a transfer-free process so that it can be applied directly to a base substrate, which is used in a transparent electrode, a semiconductor device or the like, without requiring a separate transfer process, and to an electrical device comprising a graphene layer formed by the method. More specifically, the transfer-free method for forming a graphene layer comprises the steps of: depositing a Ti layer having a thickness of 3-20 m on a base substrate by sputtering; and growing graphene on the deposited Ti layer by chemical vapor deposition.

Claims

1. A transfer-free method for forming a graphene layer, comprising the steps of:

(A) depositing a Ti layer having a thickness of 3-20 nm on a base substrate by sputtering; and

(B) growing graphene on the deposited Ti layer by chemical vapor deposition.

2. The transfer-free method of claim 1, wherein the base substrate is made of a material comprising glass, SiO₂, a synthetic polymer containing an oxygen atom, or any combination thereof.

3. The transfer-free method of claim 1, wherein the step (B) comprises growing graphene by chemical vapor deposition under a condition in which a temperature of the substrate is 150°

C. to 900°

C.

4. The transfer-free method of claim 3, wherein the step (B) comprises growing graphene by chemical vapor deposition under a condition in which a temperature of the substrate is 150°

C. to 400°

C.

5. The transfer-free method of claim 4, wherein a working pressure in the step (B) is 10 mTorr or lower.

6. The transfer-free method of claim 1, further comprising, before the depositing of the graphene, treating the Ti layer with hydrogen gas.

7. The transfer-free method of claim 1, wherein a reactive gas which is used in the chemical vapor deposition comprises a mixture of hydrogen gas and one or more carbon sources selected from the group consisting of methane, ethane, propane, acetylene, methanol, ethanol and propanol.

8. An electrical device comprising a graphene layer formed by the method of claim 1, wherein the electrical device comprises a substrate.