TEST STRUCTURE, FABRICATION METHOD, AND TEST METHOD
First Claim
1. A test structure, comprising:
- a substrate having a to-be-tested region and a peripheral region surrounding the to-be-tested region, the to-be-tested region having at least one fin, the peripheral region having at least one fin, the at least one fin in the to-be-tested region being parallel to the at least one fin in the peripheral region, and two ends of the at least one fin in the to-be-tested region extending into the peripheral region;
an insulation layer covering portions of side surfaces of the fins;
at least one first gate structure covering side and top surfaces of the at least one fin in the to-be-tested region;
a plurality of parallel second gate structures covering side and top surfaces of the at least one fin in the peripheral region, and the second gate structures being parallel to the first gate structure;
source/drain regions formed in portions of the at least one fin between adjacent second gate structures and portions of the at least one fin between the at least one first gate structure and adjacent second gate structures; and
a plurality of first conductive structures formed between adjacent second gate structures in the peripheral region, the plurality of first conductive structures crossing over at least two fins, and the plurality of first conductive structures being on surfaces of source/drain regions of at least two fins.
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Accused Products
Abstract
The present disclosure provides test structures, fabrication methods thereof and test methods thereof. An exemplary test structure includes a substrate having a to-be-tested region having at least one fin and a peripheral region having at least one fin surrounding the to-be-tested region; an insulation layer covering portions of side surfaces of the fins; at least one first gate structure covering side and top surfaces of the fin in the to-be-tested region; second gate structures covering side and top surfaces of the fins in the peripheral region; source/drain regions formed in portions of the fins between adjacent second gate structures and portions of the fins between the first gate structure and adjacent second gate structures; and a plurality of first conductive structures formed between adjacent second gate structures in the peripheral region. The plurality of first conductive structures cross over and are on source/drain regions of at least two fins.
7 Citations
20 Claims
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1. A test structure, comprising:
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a substrate having a to-be-tested region and a peripheral region surrounding the to-be-tested region, the to-be-tested region having at least one fin, the peripheral region having at least one fin, the at least one fin in the to-be-tested region being parallel to the at least one fin in the peripheral region, and two ends of the at least one fin in the to-be-tested region extending into the peripheral region; an insulation layer covering portions of side surfaces of the fins; at least one first gate structure covering side and top surfaces of the at least one fin in the to-be-tested region; a plurality of parallel second gate structures covering side and top surfaces of the at least one fin in the peripheral region, and the second gate structures being parallel to the first gate structure; source/drain regions formed in portions of the at least one fin between adjacent second gate structures and portions of the at least one fin between the at least one first gate structure and adjacent second gate structures; and a plurality of first conductive structures formed between adjacent second gate structures in the peripheral region, the plurality of first conductive structures crossing over at least two fins, and the plurality of first conductive structures being on surfaces of source/drain regions of at least two fins. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method for forming a test structure, comprising:
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providing a substrate having a to-be-tested region and a peripheral region; forming at least one fin on the substrate in the to-be-tested region and at least one fin on the substrate in the peripheral region; wherein; the at least one fin in the to-be-tested region and the at least one fin in the peripheral region are parallel; and two ends of the at least one fin in the to-be-tested region extends into the peripheral region, forming an insulation layer covering portions of side surfaces of the fins over the substrate; forming at least one first gate structure crossing over the at least one fin in the to-be-tested region and covering portions of side surfaces of the at least one fin in the to-be-tested region over the insulation layer; forming a plurality of parallel second gate structures covering portions of side surfaces of the at least one fin in the peripheral region, crossing over the at least one fin in the peripheral region and being parallel to the at least one first gate structure over the insulation layer; forming source/drain regions in portions of the fins between adjacent second gate structures and portions of the fins between the at least one first gate structure and adjacent second gate structures; and forming a plurality of first conducive structures in the peripheral region, wherein; the plurality of first conductive structures are in between adjacent second gate structures, the plurality of first conductive structures cross over at least two fins; and the plurality of first conductive structures are on surfaces of source/drain regions of at least two fins. - View Dependent Claims (17, 18)
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19. A test method, comprising:
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providing a test structure having a substrate having a to-be-tested region and a peripheral region surrounding the to-be-tested region, the to-be-tested region having at least one fin, the peripheral region having at least one fin, the at least one fin in the to-be-tested region being parallel to the at least one fin in the peripheral region, and two ends of the at least one fin in the to-be-tested region extending into the peripheral region;
an insulation layer, covering portions of side surfaces of the fins;
at least one first gate structure covering side and top surfaces of the at least one fin in the to-be-tested region;
a plurality of parallel second gate structures covering side and top surfaces of the at least one fin in the peripheral region, and the second gate structures being parallel to the first gate structure;
source/drain regions formed in portions of the at least one fin between adjacent second gate structures and portions of the at least one fin between the at least one first gate structure and adjacent second gate structures; and
a plurality of first conductive structures formed between adjacent second gate structures in the peripheral region, the plurality of first conductive structures crossing over at least two fins, and the plurality of first conductive structures being on surfaces of source/drain regions of at least two fins,wherein; a first gate structure and a source region at one side of the first gate structure and a corresponding drain region at another side of the first gate structure form a first transistor; a second gate structure and a source region at one side of the second gate structure and a corresponding drain region at another side of the second gate structure form a second transistor; the to-be-test region has at least one first transistor; and the peripheral region has a plurality of second transistors, turning on the at least one first transistor; performing temperature tests on the plurality of second transistors with pre-determined time intervals to obtain temperatures of the fins under the second gate structures; and obtaining correlations between the temperatures of the fins in the peripheral region and time. - View Dependent Claims (20)
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Specification