APPARATUS FOR DETERMINING PROCESS RATE

• US 20170084426A1
• Filed: 09/23/2015
• Published: 03/23/2017
• Est. Priority Date: 09/23/2015
• Status: Abandoned Application

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Albarede, Luc, Kabouzi, Yassine
• Application Number:
  US14/863,211
• Publication Number:
  US 20170084426A1
• Time in Patent Office: Days
• CPC Class Codes: H01J 37/32009 Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources plasma generation in general H05H1/24
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32715 Workpiece holder
• CPC Class Codes: H01J 37/32834 Exhausting
• CPC Class Codes: H01J 37/32963 End-point detection
• CPC Class Codes: H01J 37/32972 Spectral analysis
• CPC Class Codes: H01J 37/3299 Feedback systems

Abstract

An apparatus for processing a substrate is provided. A substrate support is located within a processing chamber. A gas inlet provides a process gas into the processing chamber. An exhaust pump pumps gas from the processing chamber. A gas byproduct measurement system comprises an IR light source and an IR detector. A controller comprises at least one processor and computer readable media. The computer readable media comprises computer readable code for flowing the process gas into the etch chamber, for processing data from the IR detector, for using the processed data from the IR detector for determining concentration of the gas byproduct, and for using the determined concentration of the gas byproduct for adjusting the flow of the process gas into the processing chamber.

Claims

1. An apparatus for processing a substrate, comprising

a processing chamber;

a substrate support within the processing chamber;

a gas inlet for providing a process gas into the processing chamber, wherein when a substrate is processed in the processing chamber the process provides a gas byproduct;

a gas source for providing the process gas to the gas inlet;

an exhaust pump for pumping gas from the processing chamber;

a gas byproduct measurement system, comprising;

an IR light source; and

an IR detector; and

a controller controllably connected to the gas source and IR light source and which receives signals from the IR detector, wherein the controller comprises;

at least one processor; and

computer readable media, comprising;

computer readable code for flowing the process gas into the etch chamber;

computer readable code for processing data from the IR detector;

computer readable code for using the processed data from the IR detector for determining concentration of the gas byproduct; and

computer readable code for using the determined concentration of the gas byproduct for adjusting the flow of the process gas into the processing chamber.

2. The apparatus, as recited in claim 1, further comprising computer readable code for using the determined concentration of the gas byproduct for determining processing rate and endpoint.

3. The apparatus as recited in claim 2, further comprising memory storing a plurality of models related to processing rate and endpoint, wherein the computer readable code for using the processed data, comprises computer readable code for comparing the processed data with the plurality of models to find a closest match model, wherein the closest match model indicates processing rate and endpoint.

4. The apparatus as recited in claim 3, further comprising a gas cell, with reflective minors which reflect light from the IR light source a plurality of times through the gas cell before light from the IR light source reaches the IR detector.

5. The apparatus, as recited in claim 4, wherein the IR light source is a quantum cascade laser.

6. The apparatus, as recited in claim 5, wherein the gas cell receives gas from the exhaust pump.

7. The apparatus, as recited in claim 5, wherein the gas cell is a confinement ring surrounding a process volume above the substrate support.

8. The apparatus, as recited in claim 4, wherein the reflective mirrors are formed by sides of the gas cell.

9. The apparatus as recited in claim 1, further comprising:

a second processing chamber;

a second substrate support within the second processing chamber;

a second gas inlet for providing the process gas into the second processing chamber;

wherein the gas byproduct measurement system, further comprises;

a second IR detector, associated with the second processing chamber, wherein the IR detector is associated with the processing chamber; and

a beam splitter which directs part of a beam from the IR light source to the IR detector and part of the beam from the IR light source to the second IR detector; and

wherein the controller receives signals from the second IR detector.

10. The apparatus as recited in claim 1, further comprising memory storing a plurality of models related to processing rate and endpoint, wherein the computer readable code for using the processed data, comprises computer readable code for comparing the processed data with the plurality of models to find a closest match model, wherein the closest match model indicates processing rate and endpoint.

11. The apparatus as recited in claim 1, further comprising a gas cell, with reflective minors which reflect light from the IR light source a plurality of times through the gas cell before light from the IR light source reaches the IR detector.

12. The apparatus, as recited in claim 11, wherein the gas cell receives gas from the exhaust pump.

13. The apparatus, as recited in claim 11, wherein the gas cell is a confinement ring surrounding a process volume above the substrate support.

14. The apparatus, as recited in claim 11, wherein the reflective mirrors are formed by sides of the gas cell.

15. The apparatus, as recited in claim 1, wherein the IR light source is a quantum cascade laser.

16. An apparatus for processing a substrate, comprising

a processing chamber;

a substrate support within the processing chamber;

a gas inlet for providing a process gas into the processing chamber, wherein when a substrate is processed in the processing chamber the process provides a gas byproduct;

a gas source for providing the process gas to the gas inlet;

an exhaust pump for pumping gas from the processing chamber;

a gas byproduct measurement system, comprising;

an IR light source;

a confinement ring surrounding a volume above the substrate support;

at least one minor for reflecting IR light within the confinement ring; and

an IR detector positioned to receive light from the IR light source after the light is reflected within the confinement ring a plurality of times.

17. The apparatus, as recited in claim 16, wherein the IR light source is a quantum cascade laser, and wherein the at least one minor is a reflective surface of the confinement ring.

18. An apparatus for processing a substrate, comprising

a processing chamber;

a substrate support within the processing chamber;

a gas inlet for providing a process gas into the processing chamber, wherein when a substrate is processed in the processing chamber the process provides a gas byproduct;

a gas source for providing the process gas to the gas inlet;

an exhaust pump for pumping gas from the processing chamber;

a gas byproduct measurement system, comprising;

a quantum cascade laser for providing IR light;

a gas cell, which receives exhaust from the exhaust pump;

at least one minor within the gas cell, which is reflective on IR light; and

an IR detector positioned to receive light from the quantum cascade laser after the light is reflected a plurality of times within the gas cell.

19. The apparatus, as recited in claim 18, wherein the at least one mirror is a reflective surface of the gas cell.