×

FIN STRUCTURES AND MULTI-VT SCHEME BASED ON TAPERED FIN AND METHOD TO FORM

  • US 20170084718A1
  • Filed: 12/02/2016
  • Published: 03/23/2017
  • Est. Priority Date: 10/24/2014
  • Status: Active Grant
First Claim
Patent Images

1. A method comprising:

  • forming a silicon (Si) fin;

    forming a hard mask on a top surface of the Si fin;

    forming an oxide layer on opposite sides of the Si fin;

    implanting a dopant into the Si fin;

    recessing the oxide layer to reveal an active Si fin; and

    modifying sidewalls of the active Si fin by etching.

View all claims
  • 5 Assignments
Timeline View
Assignment View
    ×
    ×