METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

• US 20170087606A1
• Filed: 09/22/2016
• Published: 03/30/2017
• Est. Priority Date: 09/28/2015
• Status: Active Grant

• Current Assignee: Kokusai Electric Corp.
• Original Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Inventors: NAKAMURA, Yoshinobu, MINAMI, Masayoshi, ASAI, Masayuki, OKUDA, Kazuyuki, URANO, Yuji
• Granted Patent: US 9,895,727 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/4408 by purging residual gases from the reaction chamber or gas lines
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Abstract

A method of manufacturing a semiconductor device is disclosed. The method includes processing a substrate by supplying a process gas to the substrate in a process chamber. The method further includes performing a purge to an interior of the process chamber while periodically changing an internal pressure of the process chamber based on a pressure width by setting a process of supplying a purge gas into the process chamber to increase the internal pressure of the process chamber and a process of vacuum-exhausting an interior of the process chamber to decrease the internal pressure of the process chamber to one cycle and repeating the cycle a plurality of times.

Claims

1. A method of manufacturing a semiconductor device, comprising:

processing a substrate by supplying a process gas to the substrate in a process chamber;

performing a first purge to an interior of the process chamber while periodically changing an internal pressure of the process chamber based on a first pressure width by setting a process of supplying a purge gas into the process chamber to increase the internal pressure of the process chamber and a process of vacuum-exhausting the interior of the process chamber to decrease the internal pressure of the process chamber to a first one cycle, and repeating the first one cycle a plurality of times; and

performing a second purge to the interior of the process chamber while periodically changing the internal pressure of the process chamber based on a second pressure width smaller than the first pressure width by setting a process of supplying a purge gas into the process chamber to increase the internal pressure of the process chamber and a process of vacuum-exhausting the interior of the process chamber to decrease the internal pressure of the process chamber to a second one cycle, and repeating the second one cycle a plurality of times.

2. The method of claim 1, wherein a maximum pressure in the process chamber in the act of performing the second purge is set to be smaller than a maximum pressure in the process chamber in the act of performing the first purge.

3. The method of claim 1, wherein the act of performing the first purge and the act of performing the second purge are performed in this order.

4. The method of claim 1, further comprising performing a precoating of the interior of the process chamber by supplying a process gas into the process chamber, after the act of performing the first purge and the act of performing the second purge are performed.

5. The method of claim 4, wherein, after the act of performing the precoating is performed, the act of performing the first purge and the act of performing the second purge are performed again.

6. The method of claim 1, further comprising performing a third purge to the interior of the process chamber while periodically changing the internal pressure of the process chamber based on a third pressure width smaller than the second pressure width by setting a process of supplying a purge gas into the process chamber to increase the internal pressure of the process chamber and a process of vacuum-exhausting the interior of the process chamber to decrease the internal pressure of the process chamber to a third one cycle, and repeating the third one cycle a plurality of times.

7. The method of claim 6, wherein a maximum pressure in the process chamber in the act of performing the third purge is set to be equal to or smaller than a maximum pressure in the process chamber in the act of performing the second purge.

8. The method of claim 6, wherein the act of performing the first purge, the act of performing the second purge, and the act of performing the third purge are performed in this order.

9. The method of claim 6, further comprising performing a precoating of the interior of the process chamber by supplying a process gas into the process chamber, after the act of performing the first purge, the act of performing the second purge, and the act of performing the third purge are performed.

10. The method of claim 9, wherein, after the act of performing the precoating is performed, the act of performing the first purge and the act of performing the second purge are performed again.

11. The method of claim 9, wherein, after the act of performing the precoating is performed, the act of performing the first purge, the act of performing the second purge, and the act of performing the third purge are performed again.

12. The method of claim 9, wherein, after the act of performing the precoating is performed, the act of performing the first purge, the act of performing the second purge, and the act of performing the third purge are performed in this order.

13. The method of claim 1, wherein, in the act of performing the second purge, the purge gas is supplied into the process chamber by a flash flow in the process of increasing the internal pressure of the process chamber.

14. The method of claim 1, further comprising removing deposits adhered to the interior of the process chamber by supplying a fluorine-based gas into the process chamber, wherein the act of performing the first purge and the act of performing the second purge are performed after the act of removing the deposits is performed.

15. The method of claim 14, wherein the act of performing the first purge and the act of performing the second purge are performed at a temperature higher than an internal temperature of the process chamber in the act of removing the deposits.

16. The method of claim 1, wherein the act of performing the first purge and the act of performing the second purge are performed at a temperature equal to or higher than an internal temperature of the process chamber in the act of processing the substrate.

17. The method of claim 1, wherein the act of performing the first purge and the act of performing the second purge are performed at a temperature higher than an internal temperature of the process chamber in the act of processing the substrate.

18. The method of claim 1, wherein the act of performing the first purge and the act of performing the second purge are performed in a state where no substrate is present in the process chamber.

19. A substrate processing apparatus, comprising:

a process chamber in which a substrate is processed;

a gas supply system configured to supply a gas to the process chamber;

an exhaust system configured to exhaust an interior of the process chamber; and

a control part configured to control the gas supply system and the exhaust system to perform;

processing the substrate by supplying a process gas to the substrate in the process chamber;

performing a first purge to the interior of the process chamber while periodically changing an internal pressure of the process chamber based on a first pressure width by setting a process of supplying a purge gas into the process chamber to increase the internal pressure of the process chamber and a process of vacuum-exhausting the interior of the process chamber to decrease the internal pressure of the process chamber to a first one cycle, and repeating the first one cycle a plurality of times; and

performing a second purge to the interior of the process chamber while periodically changing the internal pressure of the process chamber based on a second pressure width smaller than the first pressure width by setting a process of supplying a purge gas into the process chamber to increase the internal pressure of the process chamber and a process of vacuum-exhausting the interior of the process chamber to decrease the internal pressure of the process chamber to a second one cycle, and repeating the second one cycle a plurality of times.

20. A non-transitory computer-readable recording medium storing a program that causes a substrate processing apparatus to perform a process by a computer, the process comprising:

processing a substrate by supplying a process gas to the substrate in a process chamber of the substrate processing apparatus;

performing a first purge to an interior of the process chamber while periodically changing an internal pressure of the process chamber based on a first pressure width by setting a process of supplying a purge gas into the process chamber to increase the internal pressure of the process chamber and a process of vacuum-exhausting the interior of the process chamber to decrease the internal pressure of the process chamber to a first one cycle, and repeating the first one cycle a plurality of times; and

performing a second purge to the interior of the process chamber while periodically changing the internal pressure of the process chamber based on a second pressure width smaller than the first pressure width by setting a process of supplying a purge gas into the process chamber to increase an internal pressure of the process chamber and a process of vacuum-exhausting the interior of the process chamber to decrease the internal pressure of the process chamber to a second one cycle, and repeating the second one cycle a plurality of times.