Transparent Force Sensitive Structures in an Electronic Device
First Claim
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1. An electronic device, comprising:
- a cover layer configured to receive a touch input;
a display layer positioned below the cover layer;
a force layer positioned below the cover layer and configured to detect strain based on the touch input, the force layer comprising;
a first plurality of transistor force sensitive structures positioned over a first surface of a substrate;
at least one first gate contact electrically connected to each transistor force sensitive structures in the first plurality of transistor force sensitive structures, the at least one first gate contact configured to receive a first gate signal to adjust a gauge factor of at least one transistor force sensitive structure by depleting charge carriers from a semiconducting layer in the at least one transistor force sensitive structure; and
a processing device configured to receive strain signals from the first plurality of transistor force sensitive structures and configured to estimate an amount of force associated with the touch input.
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Abstract
One or more transparent transistor force sensitive structures can be included in an electronic device. The transistor force sensitive structures(s) is used to detect a force that is applied to the electronic device, to a component in the electronic device, and/or to an input region of the electronic device. As one example, the one or more transparent transistor force sensitive structures may be included in a display stack of a display in an electronic device.
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Citations
41 Claims
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1. An electronic device, comprising:
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a cover layer configured to receive a touch input; a display layer positioned below the cover layer; a force layer positioned below the cover layer and configured to detect strain based on the touch input, the force layer comprising; a first plurality of transistor force sensitive structures positioned over a first surface of a substrate; at least one first gate contact electrically connected to each transistor force sensitive structures in the first plurality of transistor force sensitive structures, the at least one first gate contact configured to receive a first gate signal to adjust a gauge factor of at least one transistor force sensitive structure by depleting charge carriers from a semiconducting layer in the at least one transistor force sensitive structure; and a processing device configured to receive strain signals from the first plurality of transistor force sensitive structures and configured to estimate an amount of force associated with the touch input. - View Dependent Claims (2, 3, 4, 5, 6, 41)
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7. An electronic device, comprising:
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a cover layer configured to receive a touch input; a display layer positioned below the cover layer; a force layer positioned below the cover layer and configured to detect strain based on the touch input, the force layer comprising; a first plurality of piezotronic transistor force sensitive structures positioned over a first surface of a substrate; and a processing device configured to receive strain signals from the first plurality of piezotronic transistor force sensitive structures and configured to estimate an amount of force associated with the touch input. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. An electronic device, comprising:
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a cover layer configured to receive a touch input; a display layer positioned below the cover layer; a force layer positioned below the cover layer and configured to detect an amount of strain based on the touch input, the force layer comprising; a first transistor force sensitive structures positioned over a first surface of a substrate, the first transistor force sensitive structure comprising; a first gate electrode positioned over a first semiconducting layer; a first source electrode at least partially positioned on a surface of the first semiconducting layer below the first gate electrode; a first drain electrode at least partially positioned on the surface of the first semiconducting layer below the first gate electrode; a first strain signal line connected to the source electrode; and a second strain signal line connected to the drain electrode; a first gate contact electrically connected to the first gate electrode, the first gate contact configured to receive a first gate signal to adjust a gauge factor of the first transistor force sensitive structure by depleting charge carriers from the first semiconducting layer; and a processing device configured to receive a first strain signal transmitted by the first or the second strain signal line that represents the amount of strain and configured to estimate an amount of force associated with the touch input. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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32. A method for producing an electronic device, the method comprising:
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providing a display layer below the cover layer, wherein the cover layer is configured to receive a touch input; providing a force layer below the cover layer and configured to detect strain based on the touch input, the force layer comprising; a first set of transistor force sensitive structures positioned over a first surface of a substrate, wherein each transistor force sensitive structure in the first set of transistor force sensitive structures includes a conductive electrode positioned over a semiconducting layer; and providing a processing device configured to receive strain signals from the first set of transistor force sensitive structures and configured to estimate an amount of force associated with the touch input.
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- 33. (canceled)
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36. A method of operating a transistor force sensitive structure, comprising:
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receiving data from one or more electronic components in an electrical device; determining an operating state or condition of the electronic device based on the received data; and adjusting a force threshold based on the determined operating state or condition, wherein the force threshold is associated with force layer that includes at least one transistor force sensitive structure. - View Dependent Claims (37, 38, 39, 40)
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Specification