Semiconductor Device Having One or More of a Shock Sensor and an Acceleration Sensor

• US 20170091610A1
• Filed: 11/04/2016
• Published: 03/30/2017
• Est. Priority Date: 05/17/2013
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Hammerschmidt, Dirk, Goller, Bernhard, Holweg, Gerald, Herndl, Thomas
• Granted Patent: US 9,886,660 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G06K 19/0704 the battery being rechargeable, e.g. solar batteries
• CPC Class Codes: G06K 19/0705 the battery being connected to a power saving arrangement
• CPC Class Codes: G06K 19/0717 the sensor being capable of sensing environmental conditions such as temperature history or pressure
• CPC Class Codes: G06K 19/0723 the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
• CPC Class Codes: G06K 19/073 Special arrangements for circuits, e.g. for protecting identification code in memory protection against unauthorised use of computer memory G06F12/14
• CPC Class Codes: G06K 19/07758 arrangements for adhering the record carrier to further objects or living beings, functioning as an identification tag

Abstract

A semiconductor device includes a semiconductor substrate having an upper first main face and first and second recess areas formed in the upper first main face, a battery arranged at the first recess area and one or more of a shock sensor and an acceleration sensor arranged at the second recess area. The shock sensor or the acceleration sensor includes a movable mass, a cantilever connected to the moveable mass, a piezoelectric layer applied to the cantilever, and a wiring connected to the piezoelectric layer. The wiring has first and second terminals. The moveable mass and part of the cantilever are arranged above the second recess area, so that the shock sensor or the acceleration sensor delivers a voltage between the first and second terminals, a strength of the voltage being dependent on a strength of a shock or acceleration exerted on the semiconductor device.

Claims

1. A semiconductor device, comprising:

a semiconductor substrate comprising an upper first main face and first and second recess areas formed in the upper first main face;

a battery arranged at the first recess area; and

one or more of a shock sensor and an acceleration sensor arranged at the second recess area;

wherein the shock sensor or the acceleration sensor comprises a movable mass, a cantilever connected to the moveable mass, a piezoelectric layer applied to the cantilever, and a wiring connected to the piezoelectric layer, the wiring comprising first and second terminals,

wherein the moveable mass and part of the cantilever are arranged above the second recess area, so that the shock sensor or the acceleration sensor delivers a voltage between the first and second terminals, a strength of the voltage being dependent on a strength of a shock or acceleration exerted on the semiconductor device.

2. The semiconductor device of claim 1, wherein the semiconductor device is configured as an identification tag and further comprises a memory to store identification information therein.

3. The semiconductor device of claim 2, wherein the semiconductor device is configured as a radio frequency identification (RFID) tag and further comprises a radio frequency transceiver.

4. The semiconductor device of claim 2, wherein the memory is integrated in the semiconductor substrate.

5. The semiconductor device of claim 2, further comprising:

a micro-controller integrated in the semiconductor substrate.

6. The semiconductor device of claim 2, further comprising:

a battery monitor configured to monitor one or more of;

an input current;

an output current; and

an output voltage of the battery.

7. The semiconductor device of claim 2, wherein the battery monitor is integrated in the semiconductor substrate.