GROWTH OF CUBIC CRYSTALLINE PHASE STRUCTURE ON SILICON SUBSTRATES AND DEVICES COMPRISING THE CUBIC CRYSTALLINE PHASE STRUCTURE
First Claim
1. A method of forming a semiconductor structure, the method comprising:
- providing a substrate comprising a first material portion and a single crystal silicon layer on the first material portion, the substrate further comprising a major front surface, a major backside surface opposing the major front surface, and a plurality of grooves positioned in the major front surface;
depositing a buffer layer in one or more of the plurality of grooves;
epitaxially growing a semiconductor material over the buffer layer and in the one or more plurality of grooves, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase.
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Accused Products
Abstract
A method of forming a semiconductor structure includes providing a substrate comprising a first material portion and a single crystal silicon layer on the first material portion. The substrate further comprises a major front surface, a major backside surface opposing the major front surface, and a plurality of grooves positioned in the major front surface. A buffer layer is deposited in one or more of the plurality of grooves. A semiconductor material is epitaxially grown over the buffer layer and in the one or more plurality of grooves, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase.
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Citations
28 Claims
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1. A method of forming a semiconductor structure, the method comprising:
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providing a substrate comprising a first material portion and a single crystal silicon layer on the first material portion, the substrate further comprising a major front surface, a major backside surface opposing the major front surface, and a plurality of grooves positioned in the major front surface; depositing a buffer layer in one or more of the plurality of grooves; epitaxially growing a semiconductor material over the buffer layer and in the one or more plurality of grooves, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A light emitting diode comprising:
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a substrate comprising a Group III/V compound semiconductor material having a cubic crystalline phase, an active region being positioned in the cubic crystalline phase; a first metal contact and a second metal contact, the first and second metal contacts being positioned to provide electrical connectivity to the light emitting diode, at least one of the first and second metal contacts being transparent to visible light; wherein the light emitting diode is not attached to a substrate comprising a Group IV semiconductor material. - View Dependent Claims (18, 19, 20, 21)
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22. An intermediate semiconductor structure comprising:
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a substrate comprising a first material portion and a single crystal silicon layer positioned on the first material portion, the substrate further comprising a major front surface, a major backside surface opposing the major front surface, and a groove positioned in the major front surface; a buffer layer disposed in the groove; an epitaxially grown semiconductor material disposed over the buffer layer and in the groove, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase layer. - View Dependent Claims (23, 24, 25, 26, 27, 28)
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Specification