Please download the dossier by clicking on the dossier button x
×

Methods of Forming Etch Masks for Sub-Resolution Substrate Patterning

  • US 20170092496A1
  • Filed: 09/20/2016
  • Published: 03/30/2017
  • Est. Priority Date: 09/24/2015
  • Status: Active Grant
First Claim
Patent Images

1. A method of patterning a substrate, the method comprising:

  • providing a substrate having mandrels positioned on an underlying layer, the mandrels comprised of a first material;

    forming first sidewall spacers on exposed sidewalls of the mandrels, the first sidewall spacers comprised of a second material;

    forming second sidewall spacers on exposed sidewalls of the first sidewall spacers, the second sidewall spacers comprised of a third material;

    forming fill structures that fill open spaces defined between exposed sidewalls of the second sidewall spacers that face each other, the fill structures comprised of a fourth material, wherein top surfaces of the mandrels, the first sidewall spacers, the second sidewall spacers, and the fill structures are all uncovered, and wherein the first material, the second material, the third material and the fourth material are all chemically different from each other.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×