Methods of Forming Etch Masks for Sub-Resolution Substrate Patterning

• US 20170092496A1
• Filed: 09/20/2016
• Published: 03/30/2017
• Est. Priority Date: 09/24/2015
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: deVilliers, Anton J.
• Granted Patent: US 9,818,611 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/0337 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/3081 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/3086 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/31144 using masks

Abstract

Techniques disclosed herein provide a method for pitch reduction (increasing pitch/feature density) for creating high-resolution features and also for cutting on pitch of sub-resolution features. Techniques include using multiple materials having different etch characteristics to selectively etch features and create cuts where specified. A sequence of materials or repeating pattern of lines of materials is used that provides selective self-alignment based on different etch resistivities. Combined with an underlying transfer or memorization layer, multiple different etch selectivities can be accessed. An etch mask defines which regions of the lines of multiple materials can be etched.

Claims

1. A method of patterning a substrate, the method comprising:

providing a substrate having mandrels positioned on an underlying layer, the mandrels comprised of a first material;

forming first sidewall spacers on exposed sidewalls of the mandrels, the first sidewall spacers comprised of a second material;

forming second sidewall spacers on exposed sidewalls of the first sidewall spacers, the second sidewall spacers comprised of a third material;

forming fill structures that fill open spaces defined between exposed sidewalls of the second sidewall spacers that face each other, the fill structures comprised of a fourth material, wherein top surfaces of the mandrels, the first sidewall spacers, the second sidewall spacers, and the fill structures are all uncovered, and wherein the first material, the second material, the third material and the fourth material are all chemically different from each other.

2. The method of claim 1, wherein the first material, the second material, the third material and the fourth material are all chemically different from each other in that a first etch chemistry selectively etches the first material relative to remaining materials, a second etch chemistry selectively etches the second material relative to remaining materials, a third etch chemistry selectively etches the third material relative to remaining materials, and a fourth etch chemistry selectively etches the fourth material relative to remaining materials.

3. The method of claim 1, wherein the first material, the second material, the third material and the fourth material are all chemically different from each other in that when etching using a predetermined etch chemistry a given two materials are selectively etched with respect to remaining materials.

4. The method of claim 1, wherein the first material, the second material, the third material and the fourth material are all chemically different from each other in that etching the substrate using a predetermined etch chemistry selectively etches a given three materials with respect to remaining materials.

5. The method of claim 1, wherein two of the first material, the second material, the third material and the fourth material are a same material in that a first etch chemistry simultaneously selectively etches two of the first material, the second material, the third material and the fourth material with respect to remaining materials.

6. The method of claim 1, further comprising executing an etching process using a predetermined etch chemistry that etches one or more selected materials selectively with respect to remaining materials.

7. The method of claim 1, wherein the underlying layer is comprised of a fifth material that is chemically different from the first material, the second material, the third material and the fourth material.

8. The method of claim 1, further comprising:

providing a first etch mask on the substrate that defines openings that uncover the first material, the second material, the third material and the fourth material;

selectively etching a first-selected material using the first etch mask and first etch chemistry; and

selectively etching a second selected material using the first etch mask and a second chemistry.

9. The method of claim 1, wherein at least a portion of the first sidewall spacers define open space between each other prior to forming the second sidewall spacers.

10. The method of claim 1, wherein providing the substrate having the mandrels positioned on the underlying layer includes the mandrels being comprised of two materials, a lower portion of the mandrels being comprised of the first material, and an upper portion of the mandrels being comprised of a sixth material, wherein the first material is selected as a stop material layer that is resistant to chemical-mechanical polishing.

11. The method of claim 10, further comprising planarizing the substrate by executing a chemical-mechanical polishing process that planarizes the mandrels, the first sidewall spacers, the second sidewall spacers, and the fill structures down to a top surface of the lower portion of the mandrels such that top surfaces of the mandrels, the first sidewall spacers, the second sidewall spacers, and the fill structures are all coplanar.

12. The method of claim 1, further comprising:

providing a first etch mask on the substrate that defines openings that uncover the first material, the second material, the third material and the fourth material;

selectively etching one or more materials relative to remaining materials using the first etch mask and a first etch chemistry;

removing the first etch mask;

providing a second etch mask on the substrate that defines openings that uncover the first material, the second material, the third material and the fourth material; and

selectively etching one or more materials relative to remaining materials using the second etch mask and a second etch chemistry.

13. The method of claim 1, wherein a pitch of the mandrels is less than an optical resolution of a given photolithography system.

14. The method of claim 1, wherein half pitch spacing of the mandrels is less than 16 nanometers.

15. The method of claim 1, wherein forming the first sidewall spacers includes conformally depositing the second material on the substrate;

and

executing a spacer open etch that removes the second material from a top surface of the mandrels and from the underlying layer in between the second material deposited on sidewalls of the mandrels.

16. The method of claim 15, wherein executing the spacer etch includes etching partially into the underlying layer.

17. The method of claim 1, wherein forming the second sidewall spacers includes conformally depositing the third material on the substrate and;

executing a spacer open etch that removes the third material from a top surface of the mandrels and from the underlying layer in between the first material deposited on sidewalls of the first sidewall spacers.

18. The method of claim 1, wherein forming the fill structures that fill open spaces defined between exposed sidewalls of the second sidewall spacers includes:

depositing an overburden of the fourth material on the substrate; and

etching back the fourth material until the fourth material is recessed below top surfaces of the second sidewall spacers.

19. A method of patterning a substrate, the method comprising:

providing a substrate having mandrels positioned on an underlying layer, the mandrels comprised of a first material;

forming first sidewall spacers on exposed sidewalls of the mandrels, the first sidewall spacers comprised of a second material;

forming second sidewall spacers on exposed sidewalls of the first sidewall spacers, the second sidewall spacers comprised of a third material;

forming fill structures that fill open spaces defined between exposed sidewalls of the second sidewall spacers that face each other, the fill structures comprised of a fourth material, wherein top surfaces of the mandrels, the first sidewall spacers, the second sidewall spacers, and the fill structures are all uncovered, and wherein at least two materials of the first material, the second material, the third material and the fourth material are chemically different from remaining materials.

20. A patterned structure on a semiconductor substrate, the patterned structure comprising:

a nanofabricated structure on a substrate having lines of four different materials, the lines of four different materials defining a repeating sequence of A-B-C-D-C-B-A in at least a portion of the substrate, a top surface of each line being uncovered, at least two of the lines of four different materials having been created as sidewall spacers using conformal deposition followed by directional etching, wherein lines of respective materials have a half-pitch spacing of less than 16 nanometers, and wherein the lines four different materials are chemically different from each other in that one or more materials can be selectively etched with respect to remaining materials.