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SELECTIVE SILICON DIOXIDE DEPOSITION USING PHOSPHONIC ACID SELF ASSEMBLED MONOLAYERS AS NUCLEATION INHIBITOR

  • US 20170092533A1
  • Filed: 12/02/2015
  • Published: 03/30/2017
  • Est. Priority Date: 09/29/2015
  • Status: Abandoned Application
First Claim
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1. A method of forming a patterned layer on a patterned substrate, the method comprising:

  • selectively forming a patterned layer on the patterned substrate, wherein a deposition rate of the patterned layer on an exposed dielectric portion of the patterned substrate is at least one hundred times greater than a deposition rate of the patterned layer on an exposed metal portion of the patterned substrate, wherein the patterned layer is patterned after formation and without application of photolithography.

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