SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
First Claim
1. A semiconductor device, comprising:
- a first semiconductor layer of a first conductivity type having a primary surface on one side thereof and a secondary surface on an opposite side thereof, and having a sensor therein;
a second semiconductor layer of a second conductivity type having a circuit element formed therein, the second semiconductor layer being formed at said one side of the primary surface of the first semiconductor layer;
an insulating layer formed between the first semiconductor layer and the second semiconductor layer, the insulating layer being disposed on the primary surface of the first semiconductor layer and surrounding the circuit element, the insulating layer including a charge-attracting semiconductor pattern of the first conductivity type that is disposed in relation to the circuit element so as to attract electrical charges generated in the insulating layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device includes a first semiconductor layer of a first conductivity type having a primary surface and having a sensor therein, a second semiconductor layer of a second conductivity type having a circuit element formed therein. The second semiconductor layer is formed at a same side of the primary surface of the first semiconductor layer. The device further includes an insulating layer formed between the first semiconductor layer and the second semiconductor layer. The insulating layer is disposed on the primary surface of the first semiconductor layer and surrounds the circuit element, and includes a charge-attracting semiconductor pattern of the first conductivity type that is disposed near the circuit element so as to attract electrical charges generated in the insulating layer.
-
Citations
11 Claims
-
1. A semiconductor device, comprising:
-
a first semiconductor layer of a first conductivity type having a primary surface on one side thereof and a secondary surface on an opposite side thereof, and having a sensor therein; a second semiconductor layer of a second conductivity type having a circuit element formed therein, the second semiconductor layer being formed at said one side of the primary surface of the first semiconductor layer; an insulating layer formed between the first semiconductor layer and the second semiconductor layer, the insulating layer being disposed on the primary surface of the first semiconductor layer and surrounding the circuit element, the insulating layer including a charge-attracting semiconductor pattern of the first conductivity type that is disposed in relation to the circuit element so as to attract electrical charges generated in the insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A manufacturing method of a semiconductor device, comprising:
-
preparing a semiconductor substrate that includes a first semiconductor layer of a first conductivity type, a first insulating layer formed on the first semiconductor layer, and a second semiconductor layer of a second conductivity type formed on the first insulating layer; forming, in a portion of the second semiconductor layer, an active region of the second conductivity type so as to be surrounded by a second insulating layer, the second insulating layer being integrally formed with the first insulating layer; and forming a charge-attracting semiconductor pattern in the first insulating layer adjacent to the active region for attracting electric charges to be generated in the first insulating layer or the second insulating layer during use of the device. - View Dependent Claims (9)
-
-
10. A manufacturing method of a semiconductor device, comprising:
-
preparing a semiconductor substrate that includes a first semiconductor layer of a first conductivity type, a first insulating layer formed on the first semiconductor layer, an intermediate semiconductor layer of the first conductivity type formed on the first insulating layer, a second insulating layer formed on the intermediate semiconductor layer, and a second semiconductor layer formed on the second insulating layer; forming, in a portion of the second semiconductor layer, an active region of the second conductivity type so as to be surrounded by a third insulating layer, the third insulating layer being integrally formed with the second insulating layer; and forming a charge-attracting semiconductor pattern in the second insulating layer adjacent to the active region to attract electric charges generated in the second insulating layer or the third insulating layer. - View Dependent Claims (11)
-
Specification