×

SEMICONDUCTOR DEVICE WITH AN ANGLED SIDEWALL GATE STACK

  • US 20170092741A1
  • Filed: 12/12/2016
  • Published: 03/30/2017
  • Est. Priority Date: 09/12/2013
  • Status: Active Grant
First Claim
Patent Images

1. A method of forming a semiconductor device, comprising:

  • forming a silicon dummy layer;

    etching the silicon dummy layer to define a first tapered sidewall and a second tapered sidewall;

    forming a first spacer adjacent the first tapered sidewall of the silicon dummy layer and forming a second spacer adjacent the second tapered sidewall of the silicon dummy layer;

    removing the silicon dummy layer to form an opening, wherein the opening is defined by a first tapered sidewall of the first spacer previously in contact with the first tapered sidewall of the silicon dummy layer and a first tapered sidewall of the second spacer previously in contact with the second tapered sidewall of the silicon dummy layer; and

    forming a gate electrode in the opening.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×