SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate;
a second semiconductor region with a second conduction type that is provided above the semiconductor substrate and includes a first semiconductor region with a first conduction type in a portion thereof;
a third semiconductor region that is provided above the second semiconductor region and has a higher second conduction type impurity concentration than the second semiconductor region; and
a gate trench that penetrates through the third semiconductor region and is provided on top of the first semiconductor region, whereinthe gate trench includes a gate insulating film provided on side walls and a bottom portion of the gate trench and a gate electrode provided in contact with the gate insulating film.
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Accused Products
Abstract
To more easily form a structure that mitigates the electrical field focus at the bottom portion of the trench gate and prevents decreases and variations in the gate threshold value (Vth), provided is a semiconductor device including a semiconductor substrate; a second semiconductor region with a second conduction type that is provided above the semiconductor substrate and includes a first semiconductor region with a first conduction type in a portion thereof; a third semiconductor region that is provided above the second semiconductor region and has a higher second conduction type impurity concentration than the second semiconductor region; and a gate trench that penetrates through the third semiconductor region and is provided on top of the first semiconductor region. The gate trench includes a gate insulating film provided on side walls and a bottom portion of the gate trench and a gate electrode provided in contact with the gate insulating film.
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Citations
16 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate; a second semiconductor region with a second conduction type that is provided above the semiconductor substrate and includes a first semiconductor region with a first conduction type in a portion thereof; a third semiconductor region that is provided above the second semiconductor region and has a higher second conduction type impurity concentration than the second semiconductor region; and a gate trench that penetrates through the third semiconductor region and is provided on top of the first semiconductor region, wherein the gate trench includes a gate insulating film provided on side walls and a bottom portion of the gate trench and a gate electrode provided in contact with the gate insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor device manufacturing method comprising:
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epitaxially forming a second semiconductor region with a second conduction type on a semiconductor substrate; epitaxially forming, on top of the second semiconductor region, a third semiconductor region that has a higher second conduction type impurity concentration than the second semiconductor region; and forming a gate trench that penetrates through the third semiconductor region; forming a first semiconductor region with a first conduction type in a portion of the second semiconductor region; and forming a gate insulating film on side walls and a bottom portion of the gate trench and forming a gate electrode in contact with the gate insulating film. - View Dependent Claims (15, 16)
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Specification