SEMICONDUCTOR LIGHT-EMITTING ELEMENT

• US 20170092812A1
• Filed: 12/14/2016
• Published: 03/30/2017
• Est. Priority Date: 09/30/2014
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: SANO, Masahiko
• Granted Patent: US 10,892,382 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/0016 having at least two p-n junctions
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

A semiconductor light-emitting element includes a first semiconductor layer of a first conductive type, a second semiconductor layer of a second conductive type, a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. The second electrode includes an ohmic electrode contacting the second semiconductor layer, and a semiconductor electrode made of a semiconductor layer contacting the ohmic electrode.

Claims

1. A semiconductor light-emitting element comprising:

a first semiconductor layer;

a second semiconductor layer;

a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer;

a first electrode connected to the first semiconductor layer; and

a second electrode connected to the second semiconductor layer,

wherein the first electrode and the second electrode are formed on the same side of the semiconductor light-emitting element, and

wherein the second electrode comprises;

a light-transmissive connection electrode in contact with the second semiconductor layer; and

a light-transmissive semiconductor electrode in contact with the connection electrode, the light-transmissive semiconductor electrode being made of a semiconductor layer.

2. The semiconductor light-emitting element according to claim 1,

wherein the connection electrode comprises a material selected from the group consisting of Ag, Ti, Al, Ni, Au, and indium tin oxide.

3. The semiconductor light-emitting element according to claim 1,

wherein the connection electrode is an ohmic electrode that includes:

a first ohmic electrode ohmically contacting the second semiconductor layer; and

a second ohmic electrode ohmically contacting the semiconductor electrode.

4. The semiconductor light-emitting element according to claim 3,

wherein the first ohmic electrode comprises a material selected from the group consisting of Ag, Ti, Al, and indium tin oxide.

5. The semiconductor light-emitting element according to claim 4,

wherein the first ohmic electrode and the second ohmic electrode are made of the same material.

6. The semiconductor light-emitting element according to claim 3,

wherein a thickness of the first ohmic electrode is greater than a thickness of the second ohmic electrode.

7. The semiconductor light-emitting element according to claim 1,

wherein the first semiconductor layer, the second semiconductor layer, and the semiconductor electrode each comprise a nitride semiconductor.

8. The semiconductor light-emitting element according to claim 7,

wherein the semiconductor electrode comprises GaN or AlGaN.

9. The semiconductor light-emitting element according to claim 8,

wherein the semiconductor electrode comprises GaN doped with an n-type impurity.

10. The semiconductor light-emitting element according to claim 9,

wherein a concentration of the n-type impurity of the semiconductor electrode is in a range of 1×

10¹⁸/cm³ to 1×

10¹⁹/cm³.

11. The semiconductor light-emitting element according to claim 1,

wherein a thickness of the semiconductor electrode is greater than a thickness of the connection electrode.

12. The semiconductor light-emitting element according to claim 1,

wherein the semiconductor electrode has a thickness in a range of 2 μ

m to 200 μ

m.

13. A semiconductor light-emitting element comprising:

a sapphire substrate;

a first semiconductor layer formed on the sapphire substrate;

a second semiconductor layer;

a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer;

a first electrode connected to the first semiconductor layer; and

a second electrode connected to the second semiconductor layer,

wherein the second electrode comprises;

a light-transmissive connection electrode in contact with the second semiconductor layer; and

a light-transmissive semiconductor electrode in contact with the connection electrode, the light-transmissive semiconductor electrode being made of a semiconductor layer.

14. The semiconductor light-emitting element according to claim 13,

wherein the sapphire substrate has protrusions on a first semiconductor layer side thereof.

15. The semiconductor light-emitting element according to claim 13,

wherein the connection electrode comprises a material selected from the group consisting of Ag, Ti, Al, Ni, Au, and indium tin oxide.

16. The semiconductor light-emitting element according to claim 13,

wherein the connection electrode is an ohmic electrode that includes:

a first ohmic electrode ohmically contacting the second semiconductor layer; and

a second ohmic electrode ohmically contacting the semiconductor electrode.

17. The semiconductor light-emitting element according to claim 16,

wherein the first ohmic electrode comprises a material selected from the group consisting of Ag, Ti, Ni, and indium tin oxide.

18. The semiconductor light-emitting element according to claim 17,

wherein the first ohmic electrode and the second ohmic electrode are made of the same material.

19. The semiconductor light-emitting element according to claim 16,

wherein a thickness of the first ohmic electrode is greater than a thickness of the second ohmic electrode.

20. The semiconductor light-emitting element according to claim 13,

wherein the first semiconductor layer, the second semiconductor layer, and the semiconductor electrode each comprise a nitride semiconductor.

21. The semiconductor light-emitting element according to claim 20,

wherein the semiconductor electrode comprises GaN or AlGaN.

22. The semiconductor light-emitting element according to claim 21,

wherein the semiconductor electrode comprises GaN doped with an n-type impurity.

23. The semiconductor light-emitting element according to claim 22,

wherein a concentration of the n-type impurity of the semiconductor electrode is in a range of 1×

10¹⁸/cm³ to 1×

10¹⁹/cm³.

24. The semiconductor light-emitting element according to claim 13,

wherein a thickness of the semiconductor electrode is greater than a thickness of the connection electrode.

25. The semiconductor light-emitting element according to claim 13,

wherein the semiconductor electrode has a thickness in a range of 2 μ

m to 200 μ

m.