LIGHT EMITTING DEVICE PACKAGE

• US 20170092820A1
• Filed: 09/29/2016
• Published: 03/30/2017
• Est. Priority Date: 09/30/2015
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: KIM, Yong Il, WON, Hyong Sik, LIM, Wan Tae, CHA, Nam Goo
• Granted Patent: US 10,230,021 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/58 Optical field-shaping elements

Abstract

A light emitting device package may include: a light emitting structure including a plurality of light emitting regions configured to emit light, respectively; a plurality of light adjusting layers formed above the light emitting regions to change characteristics of the light emitted from the light emitting regions, respectively; a plurality of electrodes configured to control the light emitting regions to emit the light, respectively; and an isolation insulating layer disposed between the light emitting regions to insulate the light emitting regions from one another, the isolation insulating layer forming a continuous structure with respect to the light emitting regions.

Claims

1. A light emitting device package comprising:

a light emitting structure comprising a plurality of light emitting regions configured to emit light, respectively;

a plurality of light adjusting layers formed above the light emitting regions to change characteristics of the light emitted from the light emitting regions, respectively;

a plurality of electrodes configured to control the light emitting regions to emit the light, respectively; and

an isolation insulating layer disposed between the light emitting regions to insulate the light emitting regions from one another, the isolation insulating layer forming a continuous structure with respect to the light emitting regions.

2. The light emitting device packet of claim 1, wherein the isolation insulating layer extends below a bottom of each of the light emitting regions.

3. The light emitting device package of claim 1, wherein each of the light adjusting layers comprises a wavelength conversion layer configured to convert a wavelength of the light emitted from a corresponding light emitting region among the light emitting regions.

4. The light emitting device packet of claim 3, wherein the light emitted from the light emitting regions have a same wavelength, and

wherein the wavelength conversion layers are configured to convert the wavelength of the light differently.

5. The light emitting device package of claim 3, wherein each of the light adjusting layers further comprises a filter layer disposed above the wavelength conversion layer, and configured to selectively block the light of which the wavelength is converted at the wavelength conversion layer.

6. The light emitting device package of claim 5, further comprising a glass layer disposed above the light adjusting layers.

7. The light emitting device package of claim 6, wherein the glass layer comprises a concave and convex structure disposed on an upper surface of the glass layer.

8. The light emitting device package of claim 1, wherein each of the light emitting regions comprises a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, and

wherein the electrodes comprise:

a plurality of first connection electrodes respectively connected to the first conductivity-type semiconductor layers of the light emitting regions; and

a second connection electrode commonly connected to the second conductivity-type semiconductor layers of the light emitting regions.

9. The light emitting device package of claim 8, wherein the electrodes further comprises:

a plurality of first electrode pads respectively connected to the first connection electrodes; and

a second electrode pad connected to the second connection electrode,

wherein a number of the first electrode pads is equal to a number of the light emitting regions, and

wherein at least two of the first electrode pads are disposed below a same light emitting region among the light emitting regions.

10. The light emitting device package of claim 9, wherein one of the plurality of first electrode pads and the second electrode pad are disposed below a same light emitting region among the light emitting regions.

11. The light emitting device package of claim 9, wherein the first connection electrode connected to the first conductivity-type semiconductor layer of one of the light emitting regions is extended below another of the light emitting region, and connected to one of the at least two first electrode pads.

12. The light emitting device package of claim 11, wherein a plan view structure of the light emitting device package takes a quadrangle form, and wherein the first electrode pads and the second electrode pad are disposed close to vertices of the light emitting device package in the plan view, respectively.

13. The light emitting device package of claim 1, further comprising a partition disposed above the isolation insulating layer and between the light adjusting layers, and configured to prevent the light emitted through the light adjusting layers from interfering one another,

wherein the partition forms a continuous structure with respect to the light adjusting layers.

14. The light emitting device package of claim 13, wherein a portion of the isolation insulating layer is inserted into a bottom of the partition.

15. The light emitting device package of claim 13, wherein each of the light emitting regions comprises a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, and

wherein the electrodes comprise:

a plurality of first connection electrodes respectively connected to the first conductivity-type semiconductor layers of the light emitting regions; and

a second connection electrode commonly connected to the second conductivity-type semiconductor layers of the light emitting regions, and

wherein a portion of the second connection electrode is disposed between light emitting regions and below the partition.

16. The light emitting device package of claim 1, wherein the isolation insulating layer comprises a plurality of insulating layers having different refractive indices.

17. The light emitting device package of claim 1, further comprising a buffer layer disposed between the light emitting structure and the plurality of light adjusting layers.

18. The light emitting device package of claim 17, wherein a portion of the isolation insulating layer is inserted into the buffer layer.

19. A light emitting device package comprising:

a light emitting structure divided into a plurality of light emitting regions configured to emit light, respectively;

a plurality of light adjusting layers formed above the light emitting regions to convert characteristics of the light emitted from the light emitting regions, respectively; and

a plurality of electrodes disposed opposite to the light adjusting layers with respect to light emitting structure and configured to respectively control the light emitting regions to emit the light,

wherein the light emitting structure forms a single chip.

20. The light emitting device package of claim 19, wherein the light emitting structure is formed by separating an epitaxial layer grown on a substrate into a plurality of the light emitting regions.

21. The light emitting device package of claim 19, further comprising an isolation insulating layer insulating the light emitting regions from one another.

22. The light emitting device package of claim 21, wherein the isolation insulating layer comprises side insulation portions disposed between the light emitting regions, and

wherein top surfaces of the side insulating portions are connected to one another through a buffer layer disposed between the light emitting structure and the light adjusting layers.

23. The light emitting device package of claim 22, wherein the buffer layer is a layer which was provided on a substrate on which the light emitting structure is grown, the substrate being removed after the light emitting structure is divided into the light emitting regions and before the light adjusting layers are disposed above the light emitting regions.

24. The light emitting device package of claim 22, wherein the buffer layer comprises a high resistance material which prevents the light emitting regions from being electrically connected to one another.

25. The light emitting device package of claim 23, wherein the buffer layer comprises AN, AlGaN, or InGaN.

26-37. -37. (canceled)