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MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20170092848A1
  • Filed: 07/14/2016
  • Published: 03/30/2017
  • Est. Priority Date: 09/25/2015
  • Status: Abandoned Application
First Claim
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1. A magnetic memory device comprising:

  • a magnetic tunnel junction pattern comprising a first free layer, a pinned layer, and a tunnel barrier layer between the first free layer and the pinned layer,wherein the first free layer comprises;

    a first free magnetic pattern having a first surface in direct contact with the tunnel barrier layer and a second surface opposite to the first surface; and

    a second free magnetic pattern in contact with the second surface of the first free magnetic pattern,wherein the second free magnetic pattern comprises iron-nickel (FeNi), andwherein a nickel content of the second free magnetic pattern ranges from about 10 at % to about 30 at %.

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