MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

• US 20170092848A1
• Filed: 07/14/2016
• Published: 03/30/2017
• Est. Priority Date: 09/25/2015
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Joonmyoung, Jang, Youngman, Kim, Keewon, Park, Yong Sung
• Application Number:
  US15/210,627
• Publication Number:
  US 20170092848A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A magnetic memory device includes a magnetic tunnel junction pattern including a first free layer, a pinned layer, and a tunnel barrier layer between the first free layer and the pinned layer. The first free layer includes a first free magnetic pattern having a first surface in direct contact with the tunnel barrier layer and a second surface opposite to the first surface, and a second free magnetic pattern in contact with the second surface. The second free magnetic pattern includes iron-nickel (FeNi), and a nickel content of the second free magnetic pattern ranges from about 10 at % to about 30 at %.

Claims

1. A magnetic memory device comprising:

a magnetic tunnel junction pattern comprising a first free layer, a pinned layer, and a tunnel barrier layer between the first free layer and the pinned layer,

wherein the first free layer comprises;

a first free magnetic pattern having a first surface in direct contact with the tunnel barrier layer and a second surface opposite to the first surface; and

a second free magnetic pattern in contact with the second surface of the first free magnetic pattern,

wherein the second free magnetic pattern comprises iron-nickel (FeNi), and

wherein a nickel content of the second free magnetic pattern ranges from about 10 at % to about 30 at %.

2. The magnetic memory device of claim 1, wherein the second free magnetic pattern further comprises at least one of cobalt (Co) or boron (B).

3. The magnetic memory device of claim 1, wherein the nickel content of the second free magnetic pattern is greater than that of the first free magnetic pattern.

4. The magnetic memory device of claim 1, wherein the first free magnetic pattern comprises cobalt-iron-boron (CoFeB).

5. The magnetic memory device of claim 1, wherein a thickness of the second free magnetic pattern is smaller than a thickness of the first free magnetic pattern.

6. The magnetic memory device of claim 1, wherein a thickness of the first free layer ranges from about 10 Å

to about 20 Å

, and

wherein a thickness of the second free magnetic pattern ranges from about 3 Å

to about 10 Å

.

7. The magnetic memory device of claim 1, further comprising:

a non-magnetic metal layer adjacent to the first free layer; and

a second free layer spaced apart from the first free layer with the non-magnetic metal layer interposed therebetween,

wherein the nickel content of the second free magnetic pattern is greater than that of the second free layer.

8. The magnetic memory device of claim 1, further comprising:

a capping layer spaced apart from the tunnel barrier layer with the first free layer interposed therebetween,

wherein the capping layer comprises a metal oxide.

9. The magnetic memory device of claim 1, wherein the pinned layer comprises a plurality of pinned layers,

wherein the plurality of pinned layers comprises:

a first pinned layer adjacent to the tunnel barrier layer; and

a second pinned layer spaced apart from the tunnel barrier layer with the first pinned layer interposed therebetween,

the magnetic memory device further comprising;

an exchange coupling layer between the first and second pinned layers.

10. The magnetic memory device of claim 9, wherein the first pinned layer comprises:

a first magnetic layer adjacent to the tunnel barrier layer; and

a second magnetic layer spaced apart from the tunnel barrier layer with the first magnetic layer interposed therebetween, the second magnetic layer being in contact with the first magnetic layer.

11-15. -15. (canceled)

16. A magnetic memory device comprising:

a magnetic tunnel junction pattern comprising a free layer, a pinned layer, and a tunnel barrier layer between the free layer and the pinned layer,

wherein the free layer comprises;

a first free magnetic pattern adjacent to the tunnel barrier layer; and

a second free magnetic pattern spaced apart from the tunnel barrier layer with the first free magnetic pattern interposed therebetween, the second free magnetic pattern adjacent to the first free magnetic pattern,

wherein the first free magnetic pattern comprises cobalt-iron-boron (CoFeB),

wherein the second free magnetic pattern comprises iron-nickel (FeNi), and

wherein a nickel content of the second free magnetic pattern ranges from about 10 at % to about 30 at %.

17. The magnetic memory device of claim 16, wherein the second free magnetic pattern further comprises boron (B), and

wherein a boron content of the second free magnetic pattern ranges from about 1 at % to about 25 at %.

18. The magnetic memory device of claim 16, wherein the first and second free magnetic patterns are magnetically connected to each other.

19-23. -23. (canceled)

24. A magnetic memory device comprising:

a magnetic tunnel junction pattern comprising a free layer, a pinned layer, and a tunnel barrier layer between the free layer and the pinned layer;

wherein the free layer comprises;

a first free magnetic pattern; and

a second free magnetic pattern on the first free magnetic pattern such that the first free magnetic pattern is between the second free magnetic pattern and the tunnel barrier layer, the second free magnetic pattern having a nickel content that is greater than a nickel content of the first free magnetic pattern.

25. The magnetic memory device of claim 24, wherein the nickel content of the second free magnetic pattern has an atomic percent between about 10 at % and about 30 at % and the nickel content of the first free magnetic pattern has an atomic percent between about 0.01 at % and about 5 at %.

26. The magnetic memory device of claim 25, wherein a boron content of the first free magnetic pattern has an atomic percent between about 1 at % and about 25 at % and a boron content of the second free magnetic pattern has an atomic percent between about 1 at % and about 25 at %.

27. The magnetic memory device of claim 24, wherein the pinned layer comprises a first pinned layer, a second pinned layer, and an exchange coupling layer between the first pinned layer and the second pinned layer;

wherein the exchange coupling layer comprises one of ruthenium, iridium, and rhodium.

28. The magnetic memory device of claim 24, wherein a thickness of the first free magnetic pattern is greater than a thickness of the second free magnetic pattern;

wherein a thickness of the first free layer is between about 10 Å and

about 20 Å

; and

wherein a thickness of the second free magnetic pattern is between about 3 Å and

about 10 Å

.

29. The magnetic memory device of claim 24, wherein the tunnel barrier layer has first and second surfaces that form interfaces with the free layer and the pinned layer, respectively;

and

wherein a magnetization direction of the free layer and a magnetization direction of the pinned layer are substantially perpendicular to the first and second surfaces of the tunnel barrier layer.

30. The magnetic memory device of claim 24, wherein the tunnel barrier layer has first and second surfaces that form interfaces with the free layer and the pinned layer, respectively;

and

wherein a magnetization direction of the free layer and a magnetization direction of the pinned layer are substantially parallel to the first and second surfaces of the tunnel barrier layer.