COMPOSITE MEMS FLOW SENSOR ON SILICON-ON-INSULATOR DEVICE AND METHOD OF MAKING THE SAME

• US 20170097252A1
• Filed: 10/05/2015
• Published: 04/06/2017
• Est. Priority Date: 10/05/2015
• Status: Abandoned Application

• Current Assignee: Wisenstech Ltd.
• Original Assignee: Wisenstech Ltd.
• Inventors: Huang, Liji, Chen, Chih-Chang
• Application Number:
  US14/875,534
• Publication Number:
  US 20170097252A1
• Time in Patent Office: Days
• CPC Class Codes: G01F 1/6845 Micromachined devices
• CPC Class Codes: G01F 1/692 Thin-film arrangements
• CPC Class Codes: G01F 1/7084 using thermal detecting arrangements
• CPC Class Codes: G01F 7/00 Volume-flow measuring devices with two or more measuring ranges; Compound meters

Abstract

The present invention disclosed a micromachined composite silicon flow sensor that is comprised of calorimetric and anemometric flow sensing elements, time-of-flight sensing elements as well as independent temperature sensing elements on a silicon-on-insulator device where the device layer is used for the thermal isolation membrane. The disclosed composite silicon flow sensor can measure mass flowrate, volumetric flowrate and flow medium temperature simultaneously, from which a full spectrum of flow parameters including flow pressure can be obtained. The sensor can be further used to alert any changes in physical properties of flow medium during operation. The disclosed manufacture process details the micromachining process of making such a sensor.

Claims

1. A MEMS silicon composite flow sensor made on a silicon-on-insulator device that is comprised of:

A MEMS silicon composite flow sensor made on a silicon-on-insulator device having calorimetric and anemometric sensing elements, time-of-flight sensing elements and an independent environmental temperature sensor, which include a micro-heater thermistor placed at the center of the sensing elements;

wherein said MEMS silicon composite flow sensor having through-holes on silicon substrate that are filled with conductive materials and electrically connected to the thermistors on the front surface; and

wherein said silicon-on-insulator having its device layer as the membrane supporting the sensing thermistors of the said composite flow sensor;

wherein said MEMS silicon composite flow sensor having a thermal isolating cavity beneath the micro-heater and sensing thermistors;

wherein said MEMS silicon composite flow sensor having surface passivation layer with the highly thermal conductive materials;

wherein said MEMS silicon mass flow sensor having the backside contacts connecting to the conductive through substrate materials and is ready for package with die-attachment equipment.

2. The MEMS silicon composite flow sensor of claim 1 wherein said MEMS silicon composite flow sensor utilizes calorimetric measurement and anemometric measurement principle having a micro-heater thermistor and two sensing element thermistors placed symmetrical or nonsymmetrical with respect to the micro-heater thermistor for mass flowrate measurement.

3. The MEMS silicon composite flow sensor of claim 1 wherein said MEMS silicon composite flow sensors utilizes time-of-flight measurement principle having a micro-heater thermistor and two sensing element thermistors placed symmetrical or nonsymmetrical with respect to the micro-heater thermistor for volumetric flowrate measurement.

4. The MEMS silicon composite flow sensor of claim 1 wherein said MEMS silicon composite flow sensors having an ambient temperature sensing thermistor is for measurement of environmental temperature;

wherein the said mass flowrate, volumetric flowrate and flow medium temperature measurement can be used to calculate the pressure value and to compose the full spectrum of flow medium parameters;

wherein the calculation can also be utilized to alert the flow medium conditions.

5. The MEMS silicon composite flow sensor of claim 1 wherein the thermistors could be made with noble metals, metal alloys such as platinum or permalloy or doped polysilicon materials with desired conductivity;

wherein thicknesses of the thermistors are preferably in the range of 80 nm to 500 nm but most preferably 100 nm for optimal materials stability and the said composite flow sensor performance.

6. The MEMS silicon composite flow sensor of claim 1 wherein said MEMS silicon composite flow sensors having the backside contacts connected to the front side thermistors via the through substrate conductive pathways;

wherein the conductive pathways are formed by a deep reactive ion etching of the substrate forming a through or non-through substrate holes and then filled with conductive materials.

7. The MEMS silicon composite flow sensor of claim 1 wherein said silicon composite flow sensor has through substrate conductive pathways;

the conductive pathways on preferred non-conductive silicon substrate contain preferred metals such as plated nickel or heavily doped polysilicon materials or even conductive polymers such as polypyrenes or polycarbazoles;

in case that the pathways first formed is non-through holes in the substrate, after the filling and formation of the conductive materials in the etched holes;

a chemical-mechanical planarization process will be applied to remove the portion of the silicon substrate corresponding to the non-through holes thickness such that a completed through substrate conductive pathways can be formed.

8. The MEMS silicon composite flow sensor of claim 1 wherein said silicon composite flow sensor has through substrate conductive pathways on both ends shall be metallized using preferably gold such that good connection to the front thermistors and backside connections for further package can be established in the later process steps.

9. The MEMS silicon composite flow sensor of claim 1 wherein said silicon composite flow sensor has a thermal isolated cavity beneath the micro-heater and two sensing elements placed on the silicon-on-insulator device layer to provide enhanced sensitivity and fast response time;

wherein the cavity is formed by removal of all silicon materials underneath the said device layer but the materials removed may or may not include the oxide underneath the said device layer;

wherein the cavity is preferably having a size not larger than 1.5 times of the total sizes of the micro-heater thermistor and the other thermistors, and it is preferably made with deep reactive ion etching, but alternatively it can also be formed via wet chemical etching using potassium hydroxide or tetramethylammonium hydroxide.

10. The MEMS silicon composite flow sensor of claim 1 wherein said silicon composite flow sensor has its surface passivated with highly thermal conductive materials such as silicon nitride or silicon carbide with a thickness range of 100 nm to 500 nm but preferably a thickness of 300 nm;

wherein the passivation is preferably made with plasma enhanced chemical vapor deposition.

11. The MEMS silicon composite flow sensor of claim 1 wherein said silicon composite flow sensor shall have a miniature footprint for mass production deployment in low cost;

wherein preferred footprint is 1.5×

1.5 mm if only minimal numbers of thermistors are required on for the measurement;

wherein in a case if additional thermistors are required, the footprint could be extended up to 2×

2 mm.

12. The MEMS silicon composite flow sensor of claim 1 wherein said silicon composite flow sensor has its final formality with backside contacts which are ready for package using die-attachment equipment without additional wires;

wherein said silicon composite flow sensor eliminates the wire binding process that is best for fast assembly and enhanced reliability due to the medium attack to the wires.

13. The MEMS silicon composite flow sensor of claim 1 wherein said composite flow sensor for further package can be achieved via the direct soldering process with the die-attachment equipment;

wherein for harsh environments such as the presence of water vapors, the sensor package shall be sealed with materials such as epoxy at the edge between the composite flow sensor chip and the sensor attached surface such that no conductive materials leakage to any possible gaps because of die-attachment process shall result in detrimental damages to the completed sensor package.