METHODS FOR ATOMIC LEVEL RESOLUTION AND PLASMA PROCESSING CONTROL

• US 20170098549A1
• Filed: 09/28/2016
• Published: 04/06/2017
• Est. Priority Date: 10/02/2015
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: AGARWAL, Ankur
• Granted Patent: US 9,978,606 B2
• Time in Patent Office: Days
• CPC Class Codes: B05D 1/62 Plasma-deposition of organic layers plasma deposition in general C23C14/00, C23C16/00
• CPC Class Codes: B05D 5/083 involving the use of fluoropolymers
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/458 characterised by the method used for supporting substrates in the reaction chamber
• CPC Class Codes: C23C 16/505 using radio frequency discharges
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32165 Plural frequencies
• CPC Class Codes: H01J 37/32174 Circuits specially adapted for controlling the RF discharge
• CPC Class Codes: H01J 37/32715 Workpiece holder
• CPC Class Codes: H01J 37/32816 Pressure
• CPC Class Codes: H01L 21/0212 the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/30655 comprising alternated and repeated etching and passivation steps, e.g. Bosch process
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31122 of layers not containing Si, e.g. PZT, Al2O3
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

Methods and apparatus for processing substrates are provided. In some embodiments, methods of processing substrates includes: (a) providing a process gas comprising a polymer-forming gas and an etching gas between a first electrode and a second electrode within the processing volume, wherein the first electrode is opposite the second electrode; (b) applying a first voltage waveform from a first RF power source to the second electrode to form a plasma from the process gas, wherein the plasma has a first ion energy to deposit a polymer layer directly atop a dielectric layer of the substrate; and (c) adjusting the first voltage waveform to a second voltage waveform to increase an ion energy of the plasma from the first ion energy to a second ion energy, wherein the plasma at the second ion energy ceases to deposit the polymer layer and proceeds to etch the polymer layer and the dielectric layer.

Claims

1. A method of processing a substrate within a processing volume of a substrate processing chamber, comprising:

(a) providing a process gas comprising a polymer-forming gas and an etching gas between a first electrode and a second electrode within the processing volume, wherein the first electrode is opposite the second electrode;

(b) applying a first voltage waveform from a first RF power source to the second electrode to form a plasma from the process gas, wherein the plasma has a first ion energy to deposit a polymer layer directly atop a dielectric layer of the substrate; and

(c) adjusting the first voltage waveform to a second voltage waveform to increase an ion energy of the plasma from the first ion energy to a second ion energy, wherein the plasma at the second ion energy ceases to deposit the polymer layer and proceeds to etch the polymer layer and the dielectric layer.

2. The method of claim 1, wherein the polymer-forming gas comprises a fluorocarbon gas.

3. The method of claim 2, wherein the etching gas comprises a noble gas.

4. The method of claim 1, wherein the process gas further comprises an oxygen containing gas.

5. The method of claim 1, wherein the first ion energy of the plasma is about 0.1 eV to about 100 eV.

6. The method of claim 1, wherein the second ion energy of the plasma is about 50 eV to about 3000 eV.

7. The method of claim 1, wherein the second electrode is disposed within a substrate support pedestal.

8. The method of claim 1, further comprising applying energy from a second RF power source to the first electrode.

9. The method of claim 8, wherein the second RF power source provides about 50 W about 2000 W of power to the first electrode.

10. The method of claim 1, further comprising repeating (b)-(c) to etch the dielectric layer to a predetermined thickness.

11. The method of claim 1, wherein adjusting the first voltage waveform to the second voltage waveform comprises varying a waveform shape and phase between the first voltage waveform and the second voltage waveform using a waveform adjuster coupled between the first RF power source and the second electrode.

12. The method of claim 1, wherein a pressure in the processing volume is about 20 mTorr to about 200 mTorr.

13. A substrate processing apparatus, comprising:

a substrate processing chamber having a substrate processing volume;

a substrate support pedestal disposed within the substrate processing volume;

first electrode disposed within the substrate support pedestal;

a second electrode disposed in the substrate processing volume opposite the first electrode;

a first waveform adjuster coupled to the first electrode;

a first RF power source coupled to the first waveform adjuster;

a second waveform adjuster coupled to the second electrode; and

a second RF power source coupled to the second waveform adjuster.

14. The substrate processing apparatus of claim 13, wherein the substrate support pedestal is movable between a lower position and a selectable upper position.

15. The substrate processing apparatus of claim 13, further comprising:

a first pulse adjuster coupled to the first electrode; and

a third RF power source coupled to the first pulse adjuster.

16. The substrate processing apparatus of claim 13, further comprising:

a second pulse adjuster coupled to the second electrode; and

a fourth RF power source coupled to the second pulse adjuster.

17. A method of processing a substrate, comprising:

(a) providing a substrate to a substrate processing chamber comprising a first electrode and a second electrode disposed opposite the first electrode;

(b) providing a process gas to the substrate processing chamber, wherein the process gas comprises a polymer-forming gas and an etching gas;

(c) applying a first voltage waveform from a first RF power source to the second electrode to form a plasma from the process gas, wherein the first RF power source is coupled to the second electrode through a first waveform adjuster, and wherein the plasma has a first ion energy to deposit a polymer layer directly atop a dielectric layer of the substrate; and

(d) adjusting the first voltage waveform to a second waveform to increase an ion energy of the plasma from the first ion energy to a second ion energy, wherein the plasma at the second ion energy ceases to deposit the polymer layer and proceeds to etch the polymer layer and the dielectric layer.

18. The method of claim 17, wherein the first ion energy of the plasma is about 0.1 eV to about 100 eV and wherein the second ion energy of the plasma is about 50 eV to about 3000 eV.

19. The method of claim 17, further comprising repeating (c)-(d) to etch the dielectric layer to a predetermined thickness.

20. The method of claim 17, wherein adjusting the first voltage waveform to the second waveform comprises varying a waveform shape and phase between the first voltage waveform and the second waveform.