FABRICATION OF SHIELDED GATE TRENCH MOSFET WITH INCREASED SOURCE-METAL CONTACT
First Claim
1. A method of forming a semiconductor device on a semiconductor substrate having a substrate top surface, comprising:
- forming a gate trench extending from the substrate top surface into the semiconductor substrate;
forming a gate electrode in the gate trench;
forming a curved sidewall portion along at least a portion of a sidewall of the gate trench;
forming a body region adjacent to the gate trench;
forming a source region embedded in the body region, including disposing source material in a region that is along at least a part of the curved sidewall portion;
forming a gate top dielectric layer over the gate electrode and having a top side that is below at least a portion of the source region; and
forming a metal layer over at least a portion of a gate trench opening and at least a portion of the source region.
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Accused Products
Abstract
Forming a semiconductor device on a semiconductor substrate having a substrate top surface includes: forming a gate trench extending from the substrate top surface into the semiconductor substrate; forming a gate electrode in the gate trench; forming a curved sidewall portion along at least a portion of a sidewall of the gate trench; forming a body region adjacent to the gate trench; forming a source region embedded in the body region, including disposing source material in a region that is along at least a part of the curved sidewall portion; forming a gate top dielectric layer over the gate electrode and having a top side that is below at least a portion of the source region; and forming a metal layer over at least a portion of a gate trench opening and at least a portion of the source region.
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Citations
13 Claims
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1. A method of forming a semiconductor device on a semiconductor substrate having a substrate top surface, comprising:
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forming a gate trench extending from the substrate top surface into the semiconductor substrate; forming a gate electrode in the gate trench; forming a curved sidewall portion along at least a portion of a sidewall of the gate trench; forming a body region adjacent to the gate trench; forming a source region embedded in the body region, including disposing source material in a region that is along at least a part of the curved sidewall portion; forming a gate top dielectric layer over the gate electrode and having a top side that is below at least a portion of the source region; and forming a metal layer over at least a portion of a gate trench opening and at least a portion of the source region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of forming a semiconductor device on a semiconductor substrate having a substrate top surface, comprising:
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forming a gate trench extending from the substrate top surface into the semiconductor substrate; forming a first electrode in the gate trench; disposing an inter-electrode dielectric material that separates the first electrode from a second electrode in the gate trench; forming the second electrode in the gate trench; forming a body region adjacent to the gate trench; forming a source region embedded in the body region; forming a dielectric layer in the gate trench, above the first electrode and the second electrode, the forming of the dielectric layer including forming a top side of the dielectric layer such that the source region extend above a top side of the dielectric layer; forming a contact trench that allows contact between the source region and the body region; and forming a metal layer over at least a portion of the gate trench opening and at least a portion of the source region;
wherein;the forming of the source region includes forming a first side that is substantially aligned with a sidewall of the gate trench, and a second side that is substantially aligned with a sidewall of the contact trench; and the forming of the metal layer includes forming the metal layer to be in contact with the source region at;
at least a portion of the first side and at least a portion of the second side. - View Dependent Claims (13)
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Specification