VAPOR PHASE DEPOSITION OF ORGANIC FILMS

• US 20170100742A1
• Filed: 10/09/2015
• Published: 04/13/2017
• Est. Priority Date: 10/09/2015
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: TUOMINEN, MARKO, HUOTARI, HANNU, PORE, VILJAMI J.
• Granted Patent: US 10,695,794 B2
• Time in Patent Office: Days
• CPC Class Codes: B05D 1/60 Deposition of organic layers from vapour phase vapour phase deposition in general C23C14/00, C23C16/00
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: H10K 71/164 using vacuum deposition

Abstract

Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve.

Claims

1. An apparatus for organic film deposition, comprising:

a vessel configured for vaporizing an organic reactant to form a reactant vapor;

a reaction space configured to accommodate a substrate and in selective fluid communication with the vessel; and

a control system configured to;

maintain the reactant in the vessel at or above a temperature A;

maintain the substrate at a temperature B, the temperature B being lower than the temperature A;

transport the reactant vapor from the vessel to the substrate; and

deposit an organic film on the substrate.

2. The apparatus of claim 1, wherein the organic film comprises a polymer.

3. The apparatus of claim 1, wherein the vessel contains a solid at room temperature and atmospheric pressure.

4. The apparatus of claim 1, wherein the vessel contains a dianhydride.

5. The apparatus of claim 1, wherein the vessel contains a pyromellitic dianhydride (PMDA).

6. The apparatus of claim 1, wherein the control system is further configured to maintain the ratio of temperature A to temperature B in Kelvin between about 1 and about 1.25.

7. The apparatus of claim 1, wherein the control system is further configured to maintain the temperature B between about 5°

C. and about 50°

C. lower than the temperature A.

8. The apparatus of claim 1, further comprising a gas line fluidly connecting the vessel to the reaction space, wherein the control system is further configured to maintain the gas line at a temperature C, the temperature C being higher than the temperature A.

9. (canceled)

10. (canceled)

11. A method for vapor depositing an organic film, comprising:

vaporizing a first organic reactant in a vaporizer at a temperature A to form a first reactant vapor;

exposing a substrate in a reaction space to the first reactant vapor at a temperature B, the temperature B being lower than the temperature A; and

depositing the organic film on the substrate.

12. The method of claim 11, wherein the organic film comprises a polymer.

15. The method of claim 12, wherein the polymer comprises a polyimide.

16. The method of claim 12, wherein the polymer comprises a polyurea.

17. The method of claim 11, wherein the organic film comprises a polyamic acid.

18. The method of claim 17, further comprising converting the polyamic acid to a polyimide.

19. The method of claim 11, wherein the first reactant is a solid at room temperature and atmospheric pressure.

20. The method of claim 11, wherein the first reactant is a dianhydride.

21. The method of claim 11, wherein the first reactant comprises pyromellitic dianhydride (PMDA).

22. The method of claim 11, wherein the ratio of temperature A to temperature B in Kelvin is between about 1 and about 1.15.

23. The method of claim 11, wherein the temperature B is between about 5°

C. and about 50°

C. lower than the temperature A.

30. The method of claim 11, wherein exposing the substrate to the first reactant vapor comprises transporting the first reactant vapor through a gas line from the vaporizer to the reaction space, wherein the gas line is at a temperature C, the temperature C being higher than the temperature A.

13. (canceled)

14. (canceled)

24. (canceled)

25. (canceled)

26. (canceled)

27. (canceled)

28. (canceled)

29. (canceled)

31-44. -44. (canceled)