VAPOR PHASE DEPOSITION OF ORGANIC FILMS

• US 20170100743A1
• Filed: 03/15/2016
• Published: 04/13/2017
• Est. Priority Date: 10/09/2015
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Pore, Viljami J., Tuominen, Marko, Huotari, Hannu
• Granted Patent: US 10,343,186 B2
• Time in Patent Office: Days
• CPC Class Codes: B05D 1/36 Successively applying liquids or other fluent materials, e.g. without intermediate treatment
• CPC Class Codes: B05D 1/60 Deposition of organic layers from vapour phase vapour phase deposition in general C23C14/00, C23C16/00
• CPC Class Codes: B05D 2505/50 Polyimides
• CPC Class Codes: B05D 3/145 After-treatment
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/45523 Pulsed gas flow or change of composition over time
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: H01L 21/02118 carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC polymers per se C08G, photoresist per se G03F
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/0234 treatment by exposure to a plasma

Abstract

Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve. Deposition reactors conducive to depositing organic films are provided.

Claims

1. A method for reducing the aspect ratio of three-dimensional structures on a substrate, comprising:

vaporizing a first reactant to form a first reactant vapor;

exposing a substrate in a reaction space to the first reactant vapor, the substrate comprising a topography with a three-dimensional structure; and

depositing an organic film over the substrate preferentially over lower features of the topography compared to higher features of the topography such that the organic film reduces an aspect ratio of the three-dimensional structure on the substrate as it deposits, wherein depositing includes exposing the substrate to the first reactant vapor.

2. The method of claim 1, wherein vaporizing is conducted at a temperature A and the substrate is at a temperature B during depositing, and a ratio of temperature A to temperature B in Kelvin is between about 1 and about 1.15.

3. The method of claim 2, wherein the temperature B is between about 5°

C. and about 50°

C. lower than the temperature A.

4. The method of claim 1 wherein depositing further comprises:

exposing the substrate to a second reactant vapor to react with species of the first reactant vapor on the substrate; and

alternately and sequentially repeating exposing the substrate to the first reactant vapor and exposing the substrate to the second reactant vapor.

5. The method of claim 1, further comprising controlling a vaporization temperature A and a substrate temperature B, such that B<

A.

6. The method of claim 5, further comprising in situ cleaning the gas line and/or reaction space with an oxygen-containing reactant.

7. The method of claim 5, wherein depositing the organic film comprises depositing a polyamic acid film, further comprising converting the polyamic acid film to a polyimide film.

8. The method of claim 5, wherein depositing the organic film comprises depositing a polymer film.

9. The method of claim 1, wherein the first reactant is an organic reactant, and exposing comprises feeding the first reactant vapor though a heated gas line extending through a side of a reactor defining the reaction space, to a gas distribution block overlying the substrate within the reaction space.

10. The method of claim 9, further comprising controlling a vaporization temperature A, a substrate temperature B, a gas line temperature C and a gas distribution block temperature D, such that B<

A<

C<

D.

11. The method of claim 10, wherein the gas distribution block maintains separate flow paths for the first reactant vapor and a second reactant vapor until reaching the reaction space.

12. The method of claim 10, wherein the gas distribution block comprises a common plenum through which the first reactant vapor and a second reactant vapor are fed.

13. The method of claim 9, wherein the gas distribution block comprises an outlet to an exhaust and a valve for controlling exhaust from the gas distribution block for purging.

14. A method of forming an organic film, comprising:

vaporizing a first reactant in a vaporizer to form a first reactant vapor;

exposing a substrate in a reaction space to the first reactant vapor and a second reactant vapor; and

depositing a polyamic acid film from the first reactant vapor and the second reactant vapor on the substrate.

15. The method of claim 14, further comprising converting the polyamic acid film to a polyimide.

16. The method of claim 14, wherein exposing the substrate to the first reactant vapor and the second reactant vapor comprises maintaining the substrate at a temperature between about 100°

C. and about 150°

C.

17. The method of claim 14, wherein the first reactant comprises a dianhydride.

18. The method of claim 17, wherein the dianhydride comprises pyromellitic dianhydride (PMDA).

19. The method of claim 14, wherein exposing the substrate to the first reactant vapor and the second reactant vapor comprises alternately and sequentially exposing the substrate to the first reactant vapor and the second reactant vapor.

20. The method of claim 19, wherein the second reactant comprises a diamine.

21. The method of claim 20, wherein the diamine comprises 1,6-diaminohexane (DAH).