EBEAM UNIVERSAL CUTTER
First Claim
1. A blanker aperture array (BAA) for an e-beam tool, the BAA comprising:
- a first column of openings along a first direction; and
a second column of openings along the first direction and staggered from the first column of openings, the first and second columns of openings together forming an array having a pitch in the first direction, wherein a scan direction of the BAA is along a second direction, orthogonal to the first direction, and wherein the pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.
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Accused Products
Abstract
Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.
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Citations
21 Claims
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1. A blanker aperture array (BAA) for an e-beam tool, the BAA comprising:
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a first column of openings along a first direction; and a second column of openings along the first direction and staggered from the first column of openings, the first and second columns of openings together forming an array having a pitch in the first direction, wherein a scan direction of the BAA is along a second direction, orthogonal to the first direction, and wherein the pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming a pattern for a semiconductor structure, the method comprising:
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forming a pattern of parallel lines above a substrate, the pattern of parallel lines having a minimal pitch layout; aligning the substrate in an e-beam tool to provide the pattern of parallel lines parallel with a scan direction of the e-beam tool, wherein the e-beam tool comprises a blanker aperture array (BAA) comprising a first array of openings along an array direction and a second array of openings along the array direction and staggered from the first array of openings, the first and second arrays of openings forming an array having a pitch in the array direction, and the array direction orthogonal to the scan direction, and wherein the pitch of the array corresponds to half of the minimal pitch layout of the pattern of parallel lines; and forming a pattern of cuts or vias in or above the pattern of parallel lines to provide line breaks for the pattern of parallel lines by scanning the substrate along the scan direction. - View Dependent Claims (10, 11)
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12. A column for e-beam tool, the column comprising:
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an electron source for providing a beam of electrons; a limiting aperture coupled with the electron source along a pathway of the beam of the beam of electrons; high aspect ratio illumination optics coupled with the limiting aperture along the pathway of the beam of the beam of electrons; a shaping aperture coupled with the high aspect ratio illumination optics along the pathway of the beam of the beam of electrons; a blanker aperture array (BAA) coupled with the shaping aperture along the pathway of the beam of the beam of electrons, the BAA comprising; a first array of openings along a first direction; and a second array of openings along the first direction and staggered from the first array of openings, the first and second arrays of openings together forming an array having a pitch in the first direction; and a final aperture coupled with the BAA along the pathway of the beam of the beam of electrons; and a sample stage for receiving the beam of electrons, wherein a scan direction of the sample stage is along a second direction, orthogonal to the first direction of the BAA, and wherein the pitch of the array of the BAA corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification