SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

• US 20170103962A1
• Filed: 03/23/2015
• Published: 04/13/2017
• Est. Priority Date: 03/26/2014
• Status: Active Grant

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: OOMAE, Syoichirou, IWABUCHI, Akira
• Granted Patent: US 9,935,074 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/4825 Connection or disconnection of other leads to or from flat leads, e.g. wires, bumps, other flat leads
• CPC Class Codes: H01L 21/4882 Assembly of heatsink parts
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/2612 Auxiliary members for layer connectors, e.g. spacers
• CPC Class Codes: H01L 2224/291 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/29294 with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
• CPC Class Codes: H01L 2224/29339 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/33181 On opposite sides of the body
• CPC Class Codes: H01L 2224/371 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/37124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/37147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/37599 Material
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48 of an individual wire connector
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48195 : the item being a discrete passive component
• CPC Class Codes: H01L 2224/48247 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73215 : Layer and wire connectors
• CPC Class Codes: H01L 2224/73221 : Strap and wire connectors
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/83 : using a layer connector
• CPC Class Codes: H01L 2224/83801 : Soldering or alloying
• CPC Class Codes: H01L 2224/83815 : Reflow soldering
• CPC Class Codes: H01L 2224/84801 : Soldering or alloying
• CPC Class Codes: H01L 2224/85399 : Material
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/3114 : the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 23/4334 : Auxiliary members in encapsulations H01L23/49568 takes precedence
• CPC Class Codes: H01L 23/49503 : characterised by the die pad
• CPC Class Codes: H01L 23/4952 : the additional leads being a bump or a wire
• CPC Class Codes: H01L 23/49537 : Plurality of lead frames mounted in one device
• CPC Class Codes: H01L 23/49548 : Cross section geometry H01L23/49562 takes precedence
• CPC Class Codes: H01L 23/49551 : characterised by bent parts
• CPC Class Codes: H01L 23/49562 : for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/49572 : consisting of thin flexible metallic tape with or without a film carrier H01L23/49503 - H01L23/49568 and H01L23/49575 - H01L23/49579 take precedence
• CPC Class Codes: H01L 23/49575 : Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 23/49589 : Capacitor integral with or on the leadframe
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/34 : Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/37 : of an individual strap connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/84 : using a strap connector
• CPC Class Codes: H01L 25/07 : the devices being of a type provided for in group H01L29/00
• CPC Class Codes: H01L 25/18 : the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/1203 : Rectifying Diode
• CPC Class Codes: H01L 2924/1205 : Capacitor
• CPC Class Codes: H01L 2924/1207 : Resistor
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14253 : Digital-to-analog converter [DAC]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H02M 7/003 : Constructional details, e.g. physical layout, assembly, wiring or busbar connections
• CPC Class Codes: H02M 7/537 : using semiconductor devices only, e.g. single switched pulse inverters
• CPC Class Codes: H02M 7/53875 : with analogue control of three-phase output
• CPC Class Codes: H02P 27/06 : using dc to ac converters or inverters H02P27/05 takes precedence
• CPC Class Codes: H02P 27/08 : with pulse width modulation

Abstract

A lead frame has a first sink, an island, and a control terminal The lead frame is bent, and at a rear surface, the island is positioned closer to one surface of a resin molded body than the first sink and a passive component mounting portion of the control terminal. A passive component is mounted on the passive component mounting portion of the control terminal through a bonding material, the passive component mounting portion being a part of one surface.

Claims

1. A semiconductor device comprising:

a lead frame that includes

one surface and a rear surface opposite to the one surface, and further includes

a first heat sink, an island, and a control terminal, the island and the control terminal being separated from the first heat sink;

a first semiconductor chip that includes

a first main electrode arranged at a facing surface of the first semiconductor chip facing the rear surface, and further includes

a control electrode and a second main electrode, the second main electrode paired with the first main electrode, the control electrode and the second main electrode being arranged at a surface of the first semiconductor chip opposite to the facing surface, the first main electrode being connected to the first heat sink;

a second heat sink arranged opposed to the surface of the first semiconductor chip at which the control electrode is arranged, the second heat sink being connected to the second main electrode;

a second semiconductor chip fixed to the island at the rear surface to control driving of the first semiconductor chip, the second semiconductor chip being connected to the control electrode through a first bonding wire, and connected to the control terminal through a second bonding wire;

a passive component mounted on a passive component mounting portion of the control terminal through a bonding material; and

a resin molding that includes a surface at the first heat sink side, and a surface at the second heat sink side in a lamination direction of the first heat sink, the second heat sink, and the first semiconductor chip, the resin molding integrally sealing the first semiconductor chip, the second semiconductor chip, the passive component, at least a part of the first heat sink and the second heat sink, the first bonding wire, the second bonding wire, the island, and a part of the control terminal including the passive component mounting portion, wherein;

a part of the lead frame is bent with respect to a remaining part of the lead frame such that a surface of the island on which the second semiconductor chip is mounted is located closer to the first heat sink side surface of the resin molding at the rear surface than a surface of the first heat sink on which the first semiconductor chip is mounted and the passive component mounting portion of the control terminal; and

the passive component is mounted on the passive component mounting portion of the control terminal at the one surface.

2. The semiconductor device according to claim 1, wherein:

the control terminal is included in a plurality of control terminals;

a part of the plurality of control terminals are connected to the island; and

the control terminal connected to the island includes a bent portion between a connection end of the control terminal connected to the island, and the passive component mounting portion.

3. The semiconductor device according to claim 1,

wherein a connection surface of the first semiconductor chip connected to the first bonding wire and a connection surface of the second semiconductor chip connected to the first bonding wire are located in an identical plane.

4. The semiconductor device according to claim 1,

wherein a part of the first heat sink at the one surface is exposed from the resin molding.

5. A method for manufacturing a semiconductor device, the semiconductor device including:

a lead frame that includes

one surface and a rear surface opposite to the one surface, and further includes

a first heat sink, an island, and a control terminal, the island and the control terminal being separated from the first heat sink;

a first semiconductor chip that includes

a first main electrode arranged at a facing surface of the first semiconductor chip facing the rear surface, and further includes

a control electrode and a second main electrode, the second main electrode paired with the first main electrode, the control electrode and the second main electrode being arranged at a surface of the first semiconductor chip opposite to the facing surface, the first main electrode being connected to the first heat sink through solder;

a second heat sink arranged opposed to the surface of the first semiconductor chip at which the control electrode is arranged, the second heat sink being connected to the second main electrode through solder (52);

a second semiconductor chip fixed to the island at the rear surface to control driving of the first semiconductor chip, the second semiconductor chip connected to the control electrode through a first bonding wire, and connected to the control terminal through a second bonding wire;

a passive component mounted on a passive component mounting portion of the control terminal through a bonding material; and

a resin molding that includes a front surface at the first heat sink side, and a rear surface at the second heat sink side in a lamination direction of the first heat sink, the second heat sink, and the first semiconductor chip, the resin molding integrally sealing the first semiconductor chip, the second semiconductor chip, the passive component, at least a part of the first heat sink and the second heat sink, the first bonding wire, the second bonding wire, the island, and a part of the control terminal including the passive component mounting portion,

the method comprising;

using the lead frame, which is bent, such that a surface of the island on which the second semiconductor chip is mounted is located closer to the first heat sink side front surface of the resin molding at the rear surface than a surface of the first heat sink on which the first semiconductor chip is mounted and the passive component mounting portion of the control terminal;

forming a connection body that integrates the lead frame and the first semiconductor chip by reflow of the solder between the first heat sink and the first semiconductor chip, and fixing the second semiconductor chip at the island;

connecting the control electrode and the second semiconductor chip through the first bonding wire after fixing the second semiconductor chip, and further connecting the second semiconductor chip and the control terminal through the second bonding wire;

reversing the connection body and positioning the reversed connection body at the second heat sink after connecting the second semiconductor chip through the first bonding wire and the second bonding wire, carrying out reflow of the solder (52) between the second heat sink and the connection body, and mounting the passive component on the passive component mounting portion of the control terminal at the one surface (34a) through the bonding material; and

molding the resin molding after mounting the passive component.

6. The method for manufacturing the semiconductor device according to claim 5,

wherein the lead frame is bended such that connection surface of the first semiconductor chip connected to the first bonding wire and connection surface of the second semiconductor chip connected to the first bonding wire are located in an identical plane.

7. The method for manufacturing the semiconductor device according to claim 5, further comprising:

exposing a part of the first heat sink at the one surface from the resin molding.