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Semiconductor Device

  • US 20170104076A1
  • Filed: 10/12/2016
  • Published: 04/13/2017
  • Est. Priority Date: 10/13/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a Group III-nitride-based High Electron Mobility Transistor (HEMT) configured as a bidirectional switch and comprising a first input/output electrode, a second input/output electrode, a gate structure arranged between the first input/output electrode and the second input/output electrode, and a field plate structure.

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