Semiconductor Device
First Claim
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1. A semiconductor device, comprising:
- a Group III-nitride-based High Electron Mobility Transistor (HEMT) configured as a bidirectional switch and comprising a first input/output electrode, a second input/output electrode, a gate structure arranged between the first input/output electrode and the second input/output electrode, and a field plate structure.
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Abstract
In an embodiment, a semiconductor device includes a Group III-nitride-based High Electron Mobility Transistor (HEMT) configured as a bidirectional switch. The Group III nitride-based HEMT includes a first input/output electrode, a second input/output electrode, a gate structure arranged between the first input/output electrode and the second input/output electrode, and a field plate structure.
7 Citations
20 Claims
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1. A semiconductor device, comprising:
a Group III-nitride-based High Electron Mobility Transistor (HEMT) configured as a bidirectional switch and comprising a first input/output electrode, a second input/output electrode, a gate structure arranged between the first input/output electrode and the second input/output electrode, and a field plate structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device, comprising:
a Group III-nitride-based High Electron Mobility Transistor (HEMT) configured as a bidirectional switch and comprising a first input/output electrode, a second input/output electrode, a gate structure arranged between the first input/output electrode and the second input/output electrode, a field plate structure, a first diode and a second diode, wherein the first diode and the second diode are coupled anti-serially between the first input/output electrode and the second input/output electrode. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
Specification