STRUCTURES AND METHODS OF FABRICATING DUAL GATE DEVICES
First Claim
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1. A semiconductor device comprising:
- a source trench formed in a substrate;
a gate trench formed in said substrate, wherein said gate trench is parallel to said source trench;
a source contact coupled to first polysilicon in said source trench at a first end of said source trench, wherein said source contact is directly over and in contact with a first surface of said first polysilicon; and
a gate contact coupled to second polysilicon in said gate trench at a second end of said gate trench, said second end opposite said first end, wherein said gate contact is directly over and in contact with a second surface of said second polysilicon.
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Abstract
First polysilicon (poly-1) is deposited into deep trenches that have been formed in a substrate. A first polysilicon polishing process is performed to planarize the exposed surfaces of the poly-1 so that the surfaces are flush with adjacent surfaces. Then, shallow trenches are formed in the substrate between the deep trenches, and second polysilicon (poly-2) is deposited into the shallow trenches. A second polysilicon polishing process is performed to planarize the exposed surface of the poly-2 so that the surface is flush with adjacent surfaces. Metal contacts to the poly-1 and the poly-2 are then formed.
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Citations
11 Claims
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1. A semiconductor device comprising:
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a source trench formed in a substrate; a gate trench formed in said substrate, wherein said gate trench is parallel to said source trench; a source contact coupled to first polysilicon in said source trench at a first end of said source trench, wherein said source contact is directly over and in contact with a first surface of said first polysilicon; and a gate contact coupled to second polysilicon in said gate trench at a second end of said gate trench, said second end opposite said first end, wherein said gate contact is directly over and in contact with a second surface of said second polysilicon. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a source trench formed in a substrate; a gate trench formed in said substrate, wherein said gate trench is parallel to said source trench and wherein said source trench and said gate trench are separated by a mesa having an upper surface; a source contact of a source metal layer coupled to and in contact with a surface of first polysilicon in said source trench at a first end of said source trench, wherein said source metal layer formed on said substrate extends over said source trench, said mesa and said gate trench; and a gate contact of a gate metal layer coupled to and in contact with a surface of second polysilicon in said gate trench at a second end of said gate trench, wherein said gate metal layer formed on said substrate extends over said source trench, said mesa and said gate trench and wherein said surface of said first polysilicon in said source trench and said surface of said second polysilicon in said gate trench are flush with said upper surface of said mesa on which said source metal layer and said gate metal layer are formed. - View Dependent Claims (9, 10, 11)
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Specification