Sputtering Apparatuses and Methods of Manufacturing a Magnetic Memory Device Using the Same

• US 20170110301A1
• Filed: 07/06/2016
• Published: 04/20/2017
• Est. Priority Date: 10/16/2015
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Joonmyoung Lee, Woojin Kim
• Inventors: LEE, Joonmyoung, KIM, Woojin
• Granted Patent: US 9,934,950 B2
• Time in Patent Office: Days
• CPC Class Codes: C23C 14/08 Oxides C23C14/10 takes precedence
• CPC Class Codes: C23C 14/3464 using more than one target C23C14/56 takes precedence
• CPC Class Codes: C23C 14/505 for rotation of the substrates
• CPC Class Codes: H01J 37/32715 Workpiece holder
• CPC Class Codes: H01J 37/34 operating with cathodic sputtering H01J37/36 takes precedence ; methods of cathodic sputtering C23C14/34
• CPC Class Codes: H01J 37/3426 Material
• CPC Class Codes: H01J 37/3447 Collimators, shutters, apertures
• CPC Class Codes: H01J 37/3488 Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A sputtering apparatus includes a process chamber in which a sputtering process is performed, a substrate holder provided in the process chamber and fixing a horizontal position of a substrate during the sputtering process, and a first sputter gun provided to be vertically spaced apart from the substrate in the process chamber. The first sputter gun is spaced apart from the substrate by a first horizontal distance during the sputtering process. The first sputter gun is fixed during the sputtering process. The first horizontal distance is a horizontal distance between the substrate and the first sputter gun when viewed from a plan view.

Claims

1. A sputtering apparatus, comprising:

a process chamber;

a substrate holder within the process chamber and that is configured to fix a horizontal position of a substrate during a sputtering process; and

a first sputter gun vertically spaced apart from the substrate in the process chamber,

wherein the first sputter gun is horizontally spaced apart from the substrate by a first distance during the sputtering process,

wherein the first sputter gun is fixed at a position during the sputtering process, and wherein the first distance is a distance between the substrate and the first sputter gun.

2. The sputtering apparatus of claim 1, further comprising:

a second sputter gun vertically spaced apart from the substrate in the process chamber,

wherein the second sputter gun is horizontally spaced apart from the substrate by a second distance during the sputtering process,

wherein the second sputter gun is fixed at a position during the sputtering process, wherein the second sputter gun is horizontally spaced apart from the first sputter gun, and

wherein the second distance is a distance between the substrate and the second sputter gun.

3. The sputtering apparatus of claim 2, wherein each of the first and second sputter guns is fixed at the position so as not to vertically overlap with the substrate during the sputtering process.

4. The sputtering apparatus of claim 2, wherein the first sputter gun comprises a first target, wherein the second sputter gun comprises a second target, and wherein the first and second targets comprise the same material.

5. The sputtering apparatus of claim 4, wherein the first target and the second target comprise a metal oxide.

6. The sputtering apparatus of claim 4, wherein the first sputter gun further comprises:

a first plate configured to supply power to the first target,

wherein the first target has a first surface in direct contact with the first plate and a second surface opposite to the first surface,

wherein the first sputter gun is disposed such that the second surface of the first target is pointed into the process chamber, and

wherein a first angle between a normal line perpendicular to the second surface of the first target and a normal line perpendicular to a top surface of the substrate ranges from 60 degrees to 90 degrees.

7. The sputtering apparatus of claim 6, wherein the second sputter gun further comprises:

a second plate configured to supply power to the second target,

wherein the second target has a first surface and a second surface opposite to each other,

wherein the first surface of the second target is in direct contact with the second plate,

wherein the second sputter gun is disposed such that the second surface of the second target is pointed into the process chamber, and

wherein a second angle between a normal line perpendicular to the second surface of the second target and the normal line perpendicular to the top surface of the substrate ranges from 60 degrees to 90 degrees.

8. The sputtering apparatus of claim 7, wherein the first angle and the second angle are equal to each other.

9. The sputtering apparatus of claim 8, wherein the first sputter gun and the second sputter gun face each other.

10. The sputtering apparatus of claim 7, further comprising:

a shutter provided over the substrate in the process chamber to protect the substrate during a pre-sputtering process performed on the first and second targets,

wherein the shutter is disposed at a lower height than the first and second sputter guns from the substrate,

wherein the shutter has a plate shape having a first length in a direction parallel to the top surface of the substrate and a second length in a direction perpendicular to the top surface of the substrate, and

wherein the first length of the plate shape is greater than the second length of the plate shape.

11. The sputtering apparatus of claim 4, wherein the first sputter gun and the second sputter gun are located at one side of the substrate when the process chamber is viewed in cross section, and wherein the first sputter gun and the second sputter gun are in an adjacent, spaced apart relationship along one direction when the process chamber is viewed in plan view.

12. The sputtering apparatus of claim 11, further comprising:

a shutter provided in the process chamber to protect the substrate during a pre-sputtering process performed on the first and second targets,

wherein the shutter is provided at one side of the substrate between the first and second sputter guns and the substrate; and

wherein the shutter has a plate shape that extends in an arrangement direction of the first and second sputter guns and that extends in a direction perpendicular to the top surface of the substrate.

13. A method of manufacturing a magnetic memory device, the method comprising:

forming a first magnetic layer on a substrate;

forming a non-magnetic layer on the first magnetic layer; and

forming a second magnetic layer on the non-magnetic layer,

wherein forming the non-magnetic layer comprises;

performing a sputtering process using a first sputter gun, wherein the first sputter gun is vertically spaced apart from the first magnetic layer, and wherein the first sputter gun comprises a first target;

wherein the first sputter gun is horizontally spaced apart from the substrate by a first distance during the sputtering process,

wherein the first sputter gun is fixed at a position during the sputtering process, and

wherein the first distance is a distance between the substrate and the first sputter gun.

14. The method of claim 13, wherein the forming of the non-magnetic layer further comprises:

performing the sputtering process with the first sputter gun and a second sputter gun, wherein the second sputter gun is vertically spaced apart from the first magnetic layer,

wherein the second sputter gun is horizontally spaced apart from the first sputter gun,

wherein the sputtering process is performed using the first sputter gun and the second sputter gun at the same time,

wherein the second sputter gun is spaced apart from the substrate by a second distance during the sputtering process,

wherein the second sputter gun is fixed at a position during the sputtering process, and

wherein the second distance is a distance between the substrate and the second sputter gun.

15-24. -24. (canceled)

25. A sputtering apparatus, comprising:

a process chamber;

a substrate holder within the process chamber, wherein the substrate holder is configured to fix a horizontal position of a substrate during a sputtering process; and

first and second sputter guns positioned above the substrate in the process chamber, wherein the first and second sputter guns are each horizontally spaced apart from the substrate by respective first and second distances, and wherein each of the first and second sputter guns is fixed at a position so as not to vertically overlap with the substrate during the sputtering process.

26. The sputtering apparatus of claim 25, wherein the first sputter gun comprises a first target, wherein the second sputter gun comprises a second target, and wherein the first and second targets comprise the same material.

27. The sputtering apparatus of claim 26, wherein the first target and the second target comprise a metal oxide.

28. The sputtering apparatus of claim 26, wherein the first sputter gun comprises a first plate configured to supply power to the first target, wherein the first target has a first surface in direct contact with the first plate and a second surface opposite to the first surface, wherein the first sputter gun is disposed such that the second surface of the first target is pointed into the process chamber, and wherein a first angle between a normal line perpendicular to the second surface of the first target and a normal line perpendicular to a top surface of the substrate ranges from 60 degrees to 90 degrees.

29. The sputtering apparatus of claim 28, wherein the second sputter gun comprises a second plate configured to supply power to the second target, wherein the second target has a first surface and a second surface opposite to each other, wherein the first surface of the second target is in direct contact with the second plate, wherein the second sputter gun is disposed such that the second surface of the second target is pointed into the process chamber, and wherein a second angle between a normal line perpendicular to the second surface of the second target and the normal line perpendicular to the top surface of the substrate ranges from 60 degrees to 90 degrees.

30. The sputtering apparatus of claim 29, further comprising:

a shutter provided over the substrate in the process chamber to protect the substrate during a pre-sputtering process performed on the first and second targets,

wherein the shutter is disposed at a lower height than the first and second sputter guns from the substrate,

wherein the shutter has a plate shape having a first length in a direction parallel to the top surface of the substrate and a second length in a direction perpendicular to the top surface of the substrate, and

wherein the first length of the plate shape is greater than the second length of the plate shape.