SYSTEMS AND METHODS FOR ULTRAHIGH SELECTIVE NITRIDE ETCH

• US 20170110335A1
• Filed: 09/21/2016
• Published: 04/20/2017
• Est. Priority Date: 10/15/2015
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Yang, Dengliang, Yaqoob, Faisal, Park, Pilyeon, Zhu, Helen H., Park, Joon Hong
• Granted Patent: US 10,192,751 B2
• Time in Patent Office: Days
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01L 21/31116 by dry-etching

Abstract

A method for selectively etching a silicon nitride layer on a substrate includes arranging a substrate on a substrate support of a substrate processing chamber. The substrate processing chamber includes an upper chamber region, an inductive coil arranged outside of the upper chamber region, a lower chamber region including the substrate support and a gas dispersion device. The gas dispersion device includes a plurality of holes in fluid communication with the upper chamber region and the lower chamber region. The method includes supplying an etch gas mixture to the upper chamber region and striking inductively coupled plasma in the upper chamber region by supplying power to the inductive coil. The etch gas mixture etches silicon nitride, promotes silicon dioxide passivation and promotes polysilicon passivation, The method includes selectively etching the silicon nitride layer on the substrate and extinguishing the inductively coupled plasma after a predetermined period.

Claims

1. A method for selectively etching a silicon nitride layer on a substrate, comprising:

arranging a substrate on a substrate support of a substrate processing chamber,

wherein the substrate processing chamber includes an upper chamber region, an inductive coil arranged outside of the upper chamber region, a lower chamber region including the substrate support and a gas dispersion device arranged between the upper chamber region and the lower chamber region, and

wherein the gas dispersion device includes a plurality of holes in fluid communication with the upper chamber region and the lower chamber region;

supplying an etch gas mixture to the upper chamber region;

striking inductively coupled plasma in the upper chamber region by supplying power to the inductive coil, wherein the etch gas mixture etches silicon nitride, promotes silicon dioxide passivation and promotes polysilicon passivation;

selectively etching the silicon nitride layer on the substrate; and

extinguishing the inductively coupled plasma after a predetermined period.

2. The method of claim 1, wherein the etch gas mixture includes a silicon nitride etch promoter including at least one gas selected from a group consisting of nitrogen trifluoride (NF₃), difluoromethane (CH₂F₂), tetrafluoromethane (CF₄), and fluoromethane (CH₃F).

3. The method of claim 2, wherein the silicon nitride etch promoter includes at least one gas selected from a group consisting of molecular oxygen (O₂), molecular nitrogen (N₂), and nitrous oxide (N₂O).

4. The method of claim 1, wherein the etch gas mixture includes a silicon dioxide passivation promoter including at least one gas selected from a group consisting of fluoromethane (CH₃F) and difluoromethane (CH₂F₂).

5. The method of claim 4, wherein the silicon dioxide passivation promoter further includes at least one gas selected from a group consisting of molecular oxygen (O₂), molecular nitrogen (N₂), and nitrous oxide (N₂O).

6. The method of claim 1, wherein the etch gas mixture includes a polysilicon passivation promoter including at least one gas selected from a group consisting of molecular oxygen (O₂), molecular nitrogen (N₂), and nitrous oxide (N₂O).

7. The method of claim 1, further comprising, after the selectively etching, dry cleaning the substrate by supplying a dry clean gas mixture to the substrate processing chamber and striking plasma in the substrate processing chamber for a predetermined period.

8. The method of claim 7, further comprising repeating the etching using the etch gas mixture and the dry cleaning using the dry clean gas mixture one or more times.

9. The method of claim 7, wherein the dry clean gas mixture includes at least one gas selected from a group consisting of carbon dioxide (CO₂) and carbon monoxide (CO).

10. The method of claim 9, wherein the dry clean gas mixture further includes at least one gas selected from a group including argon (Ar), Neon (Ne) and Helium (He).

11. The method of claim 7, wherein the dry clean gas mixture includes at least one gas selected from a group consisting of molecular nitrogen (N₂) or nitrous oxide (N₂O).

12. The method of claim 1, wherein pressure in the substrate processing chamber is in a pressure range from 0.5 to 5 Torr.

13. The method of claim 1, wherein a radio frequency (RF) bias is supplied to the substrate support during the etching.

14. The method of claim 1, wherein a radio frequency (RF) bias is not supplied to the substrate support during the etching.

15. The method of claim 1, wherein the gas dispersion device includes a showerhead including a plurality of holes.

16. The method of claim 15, wherein the plurality of holes have diameters in a range from 0.1″

to 0.75″

.

17. The method of claim 1, further comprising grounding the gas dispersion device during the etching.

18. The method of claim 1, wherein the etch gas mixture includes nitrogen trifluoride (NF₃), difluoromethane (CH₂F₂), molecular oxygen (O₂), molecular nitrogen (N₂), nitrous oxide (N₂O) and carbon monoxide (CO₂).

19. The method of claim 1, wherein the etch gas mixture includes tetrafluoro ethane (CF₄), and fluoromethane (CH₃F), molecular oxygen (O₂), molecular nitrogen (N₂), nitrous oxide (N₂O) and carbon monoxide (CO₂).

20. The method of claim 1, wherein the silicon nitride layer on the substrate is etched selectively relative to silicon dioxide.

21. The method of claim 1, wherein the silicon nitride layer on the substrate is etched selectively relative to polysilicon.

22. The method of claim 1, wherein the silicon nitride layer on the substrate is etched selectively relative to silicon oxycarbide (SiOC).

23. The method of claim 1, wherein the silicon nitride layer on the substrate is etched selectively relative to hafnium oxide (HfO_x).

24. The method of claim 1, wherein the silicon nitride layer on the substrate is etched selectively relative to titanium nitride (TiN).

25. The method of claim 1, wherein the silicon nitride layer on the substrate is etched selectively relative to tantalum nitride (TaN).

26. The method of claim 1, wherein the silicon nitride layer on the substrate is etched selectively relative to tungsten (W).

27. The method of claim 1, wherein the silicon nitride layer on the substrate is etched selectively relative to titanium aluminum nitride (TiAlN).