Semiconductor Device with Control Structure Including Buried Portions and Method of Manufacturing
First Claim
1. A semiconductor device, comprising:
- transistor cells including source zones of a first conductivity type and body zones of a second conductivity type, wherein the source and body zones are formed in a semiconductor mesa formed from a portion of a semiconductor body; and
control structures that comprise first portions extending from a first surface into the semiconductor body on at least two opposing sides of the semiconductor mesa, second portions between the first portions and separated from the first surface by portions of the semiconductor mesa, and third portions connecting the first and the second portions and separated from the first surface by portions of the semiconductor mesa, wherein constricted sections of the semiconductor mesa separate third portions neighboring each other along a horizontal longitudinal extension of the semiconductor mesa.
2 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device includes transistor cells and control structures. The transistor cells include source zones of a first conductivity type and body zones of a second conductivity type. The source and body zones are formed in a semiconductor mesa formed from a portion of a semiconductor body. The control structures include first portions extending from a first surface into the semiconductor body on at least two opposing sides of the semiconductor mesa, second portions between the first portions and separated from the first surface by portions of the semiconductor mesa, and third portions connecting the first and the second portions and separated from the first surface by portions of the semiconductor mesa. Constricted sections of the semiconductor mesa separate third portions neighboring each other along a horizontal longitudinal extension of the semiconductor mesa.
-
Citations
14 Claims
-
1. A semiconductor device, comprising:
-
transistor cells including source zones of a first conductivity type and body zones of a second conductivity type, wherein the source and body zones are formed in a semiconductor mesa formed from a portion of a semiconductor body; and control structures that comprise first portions extending from a first surface into the semiconductor body on at least two opposing sides of the semiconductor mesa, second portions between the first portions and separated from the first surface by portions of the semiconductor mesa, and third portions connecting the first and the second portions and separated from the first surface by portions of the semiconductor mesa, wherein constricted sections of the semiconductor mesa separate third portions neighboring each other along a horizontal longitudinal extension of the semiconductor mesa. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A semiconductor device, comprising:
-
transistor cells comprising source zones of a first conductivity type and body zones of a second conductivity type, wherein the source and body zones are formed in a semiconductor mesa formed from a portion of a semiconductor body; and control structures that comprise top portions arranged on two opposing sides of a top section of the semiconductor mesa and extending from a first surface into the semiconductor body, and bottom portions in a distance to the first surface on opposing sides of a bottom section of the semiconductor mesa, wherein the bottom section of the semiconductor mesa is connected to the top section, wherein at least one of the top and bottom sections comprises a variation of an effective width along a horizontal longitudinal extension of the semiconductor mesa and wherein, in case both the top and the bottom sections comprise a variation of an effective width along the horizontal longitudinal extension of the semiconductor mesa variations of an effective width of the bottom section and variations of an effective width of the top section are not geometrically similar. - View Dependent Claims (10, 11, 12, 13, 14)
-
Specification