SYSTEMS AND METHODS FOR COLOR BINNING

• US 20170111598A1
• Filed: 12/30/2016
• Published: 04/20/2017
• Est. Priority Date: 10/30/2009
• Status: Active Grant

• Current Assignee: InVisage Technologies, Inc. (Apple Inc.)
• Original Assignee: InVisage Technologies, Inc. (Apple Inc.)
• Inventors: Tian, Hui, Lee, Jess Jan Young, Della Nave, Pierre Henri Rene
• Granted Patent: US 10,154,209 B2
• Time in Patent Office: Days
• CPC Class Codes: H04N 2209/047 using multispectral pick-up elements
• CPC Class Codes: H04N 23/11 for generating image signals from visible and infrared light wavelengths
• CPC Class Codes: H04N 25/131 including elements passing infrared wavelengths
• CPC Class Codes: H04N 25/134 based on three different wavelength filter elements
• CPC Class Codes: H04N 25/135 based on four or more different wavelength filter elements
• CPC Class Codes: H04N 25/46 by combining or binning pixels
• CPC Class Codes: H04N 25/57 Control of the dynamic range
• CPC Class Codes: H04N 25/60 Noise processing, e.g. detecting, correcting, reducing or removing noise
• CPC Class Codes: H04N 25/618 for random or high-frequency noise
• CPC Class Codes: H04N 25/70 SSIS architectures; Circuits associated therewith
• CPC Class Codes: H04N 25/75 Circuitry for providing, modifying or processing image signals from the pixel array
• CPC Class Codes: H04N 25/76 Addressed sensors, e.g. MOS or CMOS sensors
• CPC Class Codes: H04N 25/78 Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Abstract

In various exemplary embodiments, optically sensitive devices comprise a plurality of pixel regions. Each pixel region includes an optically sensitive layer over a substrate and has subpixel regions for separate wavebands. A pixel circuit comprises a charge store and a read out circuit for each subpixel region. Circuitry is configured to select a plurality of subpixel elements from different pixels that correspond to the same waveband for simultaneous reading to a shared read out circuit.

Claims

1. An image sensor comprising:

an array of subpixels comprising photosensitive material;

circuitry configured to operate in a first selectable mode to read out signals from the individual subpixels of photosensitive material; and

circuitry configured to operate in a second selectable mode to read out a binned signal for a plurality of subpixel regions corresponding to a first color waveband and to read out unbinned signals for a plurality of subpixel regions corresponding to a second color waveband.

2. The image sensor of claim 1, wherein the circuitry configured to operate in a second selectable mode reads out unbinned signals for a plurality of subpixel regions corresponding to a third color waveband.