SELF ALIGNED VIA AND PILLAR CUT FOR AT LEAST A SELF ALIGNED DOUBLE PITCH
First Claim
1. A method of forming via openings comprising:
- forming a first set of spacers on sidewalls of a first set of mandrels, the first set of mandrels present on a material layer for forming a second mandrel that is present overlying at least one interlevel dielectric layer;
etching the mandrel material layer using the first set of spacers as an etch mask to form a second set of mandrels, wherein etching the mandrel material layer includes removing the first set of mandrels;
forming a second set of spacers on the second set of mandrels;
etching the hardmask layer using the second set of spacers on the second set of mandrels to define a first pillar of hardmask material;
etching the interlevel dielectric layer using the first pillar of hardmask material and a first via etch mask to provide a first via opening;
removing the second set of mandrels; and
forming a second via opening in the interlevel dielectric layer.
1 Assignment
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Accused Products
Abstract
A method of forming via openings that includes forming sidewall spacers on a plurality of mandrels that are overlying a hardmask layer that is present on an interlevel dielectric layer. Etching the hardmask layer using a portion of the sidewall spacers and the plurality of mandrels to form a first pillar of hardmask material. The interlevel dielectric layer is etched using the first pillar of hardmask material as a mask to define a first via opening. The plurality of mandrels are removed. The hardmask layer is etched using the spacers to define a second pillar of hardmask material. The interlevel dielectric layer is etched using the second pillar of hardmask material to provide a second via opening.
4 Citations
20 Claims
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1. A method of forming via openings comprising:
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forming a first set of spacers on sidewalls of a first set of mandrels, the first set of mandrels present on a material layer for forming a second mandrel that is present overlying at least one interlevel dielectric layer; etching the mandrel material layer using the first set of spacers as an etch mask to form a second set of mandrels, wherein etching the mandrel material layer includes removing the first set of mandrels; forming a second set of spacers on the second set of mandrels; etching the hardmask layer using the second set of spacers on the second set of mandrels to define a first pillar of hardmask material; etching the interlevel dielectric layer using the first pillar of hardmask material and a first via etch mask to provide a first via opening; removing the second set of mandrels; and forming a second via opening in the interlevel dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming via openings comprising:
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forming a first set of spacers on sidewalls of a first set of mandrels, the first set of mandrels present on a material layer for forming a second mandrel that is present overlying at least one interlevel dielectric layer; etching the mandrel material layer using the first set of spacers as an etch mask to form a second set of mandrels, wherein etching the mandrel material layer includes removing the first set of mandrels; forming a second set of spacers on the second set of mandrels; etching the hardmask layer using the second set of spacers on the second set of mandrels to define a first pillar of hardmask material; etching the interlevel dielectric layer using the first pillar of hardmask material and a first via etch mask to provide a first via opening; depositing a first fill dielectric in the first via opening; planarizing to remove the first set of spacers; removing said second set of mandrels with an etch process; and forming a second via opening in the interlevel dielectric layer. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method of forming via openings comprising:
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forming a first set of spacers on sidewalls of a first set of mandrels, the first set of mandrels present on a material layer for forming a second mandrel that is present overlying at least one interlevel dielectric layer; etching the mandrel material layer using the first set of spacers as an etch mask to form a second set of mandrels, wherein etching the mandrel material layer includes removing the first set of mandrels; forming a second set of spacers on the second set of mandrels; etching the hardmask layer using the second set of spacers on the second set of mandrels to define a first pillar of hardmask material; etching the interlevel dielectric layer using the first pillar of hardmask material and a first via etch mask to provide a first via opening; removing the second set of mandrels; forming a pillar etch mask having an opening exposing a portion of the hardmask layer and the second set of spacers; etching the portion of the hardmask layer exposed by the pillar etch mask to form a second pillar of hardmask material; forming a second via mask having an opening exposing a portion of the at least one interlevel dielectric layer through an opening through the hardmask layer that is adjacent to the second pillar of hardmask material; and etching second via opening into the at least one interlevel dielectric. - View Dependent Claims (17, 18, 19, 20)
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Specification