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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

  • US 20170117192A1
  • Filed: 07/21/2016
  • Published: 04/27/2017
  • Est. Priority Date: 10/26/2015
  • Status: Abandoned Application
First Claim
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1. A semiconductor device, comprising:

  • a first gate electrode on a substrate, the first gate electrode having a first ratio of a width of an upper surface thereof to a width of a lower surface thereof;

    a second gate electrode on the substrate, the second gate electrode having a second ratio of a width of an upper surface thereof to a width of a lower surface thereof such that the second ratio is less than the first ratio;

    a first gate spacer on a sidewall of the first gate electrode;

    a second gate spacer on a sidewall of the second gate electrode; and

    an interlayer insulating film at least partially covering the first gate spacer and the second gate spacer.

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