VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
First Claim
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1. A vertical memory device, comprising:
- a substrate;
a plurality of gate lines stacked and spaced apart from each other along a first direction that extends vertically with respect to a surface of the substrate, each of the gate lines including a gate step portion protruding in a second direction that is different from the first direction;
at least one etch-stop layer covering the gate step portion of at least one of the gate lines and including a conductive material;
channels extending through the gate lines in the first direction; and
contacts extending through the at least one etch-stop layer and on the gate step portions.
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Abstract
A vertical memory device includes a plurality of gate lines, at least one etch-stop layer, channels, and contacts. The gate lines are stacked and spaced apart from each other along a first direction with respect to a surface of substrate. Each of the gate lines includes step portion protruding in a second direction. The at least one etch-stop layer covers the step portion of at least one of the gate lines and includes conductive material. The channels extend through the gate lines in the first direction. The contacts extend through the at least one etch-stop layer and are on the step portions of the gate lines.
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Citations
20 Claims
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1. A vertical memory device, comprising:
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a substrate; a plurality of gate lines stacked and spaced apart from each other along a first direction that extends vertically with respect to a surface of the substrate, each of the gate lines including a gate step portion protruding in a second direction that is different from the first direction; at least one etch-stop layer covering the gate step portion of at least one of the gate lines and including a conductive material; channels extending through the gate lines in the first direction; and contacts extending through the at least one etch-stop layer and on the gate step portions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A vertical memory device, comprising:
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a substrate; a gate line stack structure on the substrate and including; gate lines stacked and spaced apart from each other in a first direction that extends vertically with respect to a surface of the substrate; insulating interlayer patterns stacked and spaced apart from each other by the gate lines in the first direction; and channels extending through the insulating interlayer patterns and the gate lines in the first direction; a first etch-stop layer on the gate line stack structure and including an insulation material; a second etch-stop layer on the first etch-stop layer and including a conductive material; and contacts extending through the second etch-stop layer and the first etch-stop layer, the contacts being electrically connected to the gate lines. - View Dependent Claims (15)
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16. A memory device, comprising:
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a substrate; a plurality of gate lines stacked on the substrate; a plurality of insulating layers between the gate lines respectively, the gate lines and insulating layers arranged in steps; a first etch-stop layer on the steps and including a first material; a second etch-stop layer on the first etch-stop layer and including a second material different from the first material; channels extending through the gate lines; and contacts extending through the first and second etch-stop layers to contact respective ones of the gate lines through corresponding ones of the insulating layers. - View Dependent Claims (17, 18, 19, 20)
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Specification