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VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME

  • US 20170117222A1
  • Filed: 07/12/2016
  • Published: 04/27/2017
  • Est. Priority Date: 10/22/2015
  • Status: Active Grant
First Claim
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1. A vertical memory device, comprising:

  • a substrate;

    a plurality of gate lines stacked and spaced apart from each other along a first direction that extends vertically with respect to a surface of the substrate, each of the gate lines including a gate step portion protruding in a second direction that is different from the first direction;

    at least one etch-stop layer covering the gate step portion of at least one of the gate lines and including a conductive material;

    channels extending through the gate lines in the first direction; and

    contacts extending through the at least one etch-stop layer and on the gate step portions.

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