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Interconnection Structure and Method of Forming Same

  • US 20170117245A1
  • Filed: 11/14/2016
  • Published: 04/27/2017
  • Est. Priority Date: 09/18/2012
  • Status: Active Grant
First Claim
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1. A method of forming semiconductor device, the method comprising:

  • mounting a substrate trace on a first substrate, the substrate trace having a first tapering profile; and

    coupling a metal ladder bump on a second substrate and the substrate trace together through direct metal-to-metal bonding, the metal ladder bump having a second tapering profile, the first substrate and the second substrate being bonded without use of solder.

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