A FLIP-CHIP STRUCTURE OF GROUP III SEMICONDUCTOR LIGHT EMITTING DEVICE
First Claim
1. A flip-chip structure of Group III semiconductor light emitting device comprising:
- a substrate, a buffer layer, a N type nitride semiconductor layer, an active layer, a P type nitride semiconductor layer, a transparent conductive layer, a first insulation layer, a P type contact metal, a N type contact metal, a second insulation layer, a flip-chip P type electrode and a flip-chip N type electrode, wherein the substrate, the buffer layer, the N type nitride semiconductor layer, the active layer, the P type nitride semiconductor layer which grow sequentially from bottom to top form a linear convex mesa;
wherein the linear convex mesa comprises a first top surface, a side surface and a second top surface, the first top surface and the second top surface individually connects with the side surface to form a L shape structure, the first top surface of the linear convex mesa being the top surface of the P type nitride semiconductor layer, the second top surface of the linear convex mesa being the top surface of the N type nitride semiconductor layer;
a transparent conductive layer located on the top of the first top surface;
a first insulation layer structure located on the first top surface, the side surface, the second top surface and the surface of the transparent conductive layer;
the bottom end of the P type contact metal is located between the first insulation layer structure and the transparent conductive layers or on the transparent conductive layer;
the bottom end of the N type contact metal located between the first insulation layer structure and the second top surfaces or on the second top surface;
a second insulation layer located on the first insulation layer, the top surface of the P type contact metal and the N type contact metal;
the bottom end of the flip-chip P type electrode located on the surface of the P type contact metal and the second insulation layer structure;
the bottom end of the flip-chip N type electrode located on the surface of the N type contact metal and the second insulation layer structure.
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Abstract
This application refers to a flip-chip structure of Group III semiconductor light emitting device. The flip-chip structure includes: a substrate, a buffer layer, nitride semiconductor layer, an active layer, a P type nitride semiconductor layer, a transparent conductive layer, a first insulation layer, a P type contact metal, a N type contact metal, a second insulation layer, a flip-chip P type electrode and a flip-chip N type electrode. The substrate, the buffer layer, the N type nitride semiconductor layer, the active layer, the P type nitride semiconductor layer which grow sequentially from bottom to top form a linear convex mesa. In this application, structure of the first insulation layer which is formed by a Braggs reflective layer, a metal layer and the multilayer oxide insulation layer, acts as a reflector structure and an insulation layer to replace the flip-chip reflector structure design and the first insulation layer, so that a metal protective layer can be omitted.
31 Citations
15 Claims
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1. A flip-chip structure of Group III semiconductor light emitting device comprising:
- a substrate, a buffer layer, a N type nitride semiconductor layer, an active layer, a P type nitride semiconductor layer, a transparent conductive layer, a first insulation layer, a P type contact metal, a N type contact metal, a second insulation layer, a flip-chip P type electrode and a flip-chip N type electrode, wherein the substrate, the buffer layer, the N type nitride semiconductor layer, the active layer, the P type nitride semiconductor layer which grow sequentially from bottom to top form a linear convex mesa;
wherein the linear convex mesa comprises a first top surface, a side surface and a second top surface, the first top surface and the second top surface individually connects with the side surface to form a L shape structure, the first top surface of the linear convex mesa being the top surface of the P type nitride semiconductor layer, the second top surface of the linear convex mesa being the top surface of the N type nitride semiconductor layer; a transparent conductive layer located on the top of the first top surface; a first insulation layer structure located on the first top surface, the side surface, the second top surface and the surface of the transparent conductive layer; the bottom end of the P type contact metal is located between the first insulation layer structure and the transparent conductive layers or on the transparent conductive layer; the bottom end of the N type contact metal located between the first insulation layer structure and the second top surfaces or on the second top surface; a second insulation layer located on the first insulation layer, the top surface of the P type contact metal and the N type contact metal; the bottom end of the flip-chip P type electrode located on the surface of the P type contact metal and the second insulation layer structure; the bottom end of the flip-chip N type electrode located on the surface of the N type contact metal and the second insulation layer structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
- a substrate, a buffer layer, a N type nitride semiconductor layer, an active layer, a P type nitride semiconductor layer, a transparent conductive layer, a first insulation layer, a P type contact metal, a N type contact metal, a second insulation layer, a flip-chip P type electrode and a flip-chip N type electrode, wherein the substrate, the buffer layer, the N type nitride semiconductor layer, the active layer, the P type nitride semiconductor layer which grow sequentially from bottom to top form a linear convex mesa;
Specification