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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

  • US 20170117363A1
  • Filed: 05/03/2016
  • Published: 04/27/2017
  • Est. Priority Date: 10/27/2015
  • Status: Active Grant
First Claim
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1. A method of fabricating a semiconductor device, comprising:

  • forming a heterogeneous channel layer on a strain relaxed buffer (SRB) layer, the heterogeneous channel layer including a silicon layer on a first portion of the SRB layer and a silicon germanium (SiGe) alloy layer on a second portion of the SRB layer;

    performing a first etching process on the heterogeneous channel layer and the SRB layer to form a plurality of first trenches and a plurality of second trenches, wherein each first trench penetrates through the silicon layer and into the first portion of the SRB layer to a first depth, and wherein each second trench penetrates through the SiGe alloy layer and into the second portion of the SRB layer to a second depth;

    forming first liners on first sidewalls of the first trenches having the first depth and second sidewalls of the second trenches having the second depth; and

    performing a second etching process on the SRB layer exposed by the first liners so that the first trenches are extended to a third depth to form a plurality of first fin type structures and the second trenches are extended to a fourth depth to form a plurality of second fin type structures, wherein the first fin type structures are defined by the first trenches having the third depth and the second fin type structures are defined by the second trenches having the fourth depth.

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