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CONFORMAL DOPING FOR PUNCH THROUGH STOPPER IN FIN FIELD EFFECT TRANSISTOR DEVICES

  • US 20170117365A1
  • Filed: 11/22/2016
  • Published: 04/27/2017
  • Est. Priority Date: 10/26/2015
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor device comprising:

  • forming a spacer of a dielectric material on sidewalls of fin structures;

    exposing a portion of the fin structures underlying the spacer of the dielectric material; and

    doping the exposed portion of the fin structures underlying the spacer with a dopant having a first conductivity type to form a punch through stop region.

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