PULSED VALVE MANIFOLD FOR ATOMIC LAYER DEPOSITION

• US 20170121818A1
• Filed: 01/06/2017
• Published: 05/04/2017
• Est. Priority Date: 10/28/2011
• Status: Active Application

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM America Incorporated (ASM International NV)
• Inventors: Dunn, Todd, White, Carl, Halpin, Mike, Shero, Eric, Terhorst, Herbert, Winkler, Jerry
• Granted Patent: US 10,370,761 B2
• Time in Patent Office: Days
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45512 Premixing before introduction in the reaction chamber
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: C23C 16/45563 Gas nozzles
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/4557 Heated nozzles
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: C23C 16/45576 Coaxial inlets for each gas
• CPC Class Codes: C23C 16/45589 Movable means, e.g. fans
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence

Abstract

A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.

Claims

1. A method of deposition comprising:

providing a manifold configured to deliver vapor to an injector, the manifold comprising a manifold body having a bore disposed within the body, the bore having a longitudinal axis,

conducting an ALD process using the manifold, the ALD process comprising;

supplying an inert gas to an inlet of the bore,

supplying a first reactant vapor to the bore such that the first reactant vapor enters the bore at a plurality of angular positions about the longitudinal axis of the bore and at an acute angle with respect to the longitudinal axis of the bore, and

providing the first reactant vapor from the bore to the injector.

2. The method of claim 1, wherein supplying the first reactant vapor comprises feeding the first reactant to the bore tangentially, as viewed in a transverse cross-section.

3. The method of claim 1, wherein supplying the first reactant vapor comprises feeding the bore through a plurality of first supply channels disposed within the body and in flow communication with the bore.

4. The method of claim 3, wherein supply the first reactant vapor comprises feeding the first reactant vapor through a first distribution channel upstream of the first supply channels, the first distribution channel being disposed within the body and extending in a plane intersecting the longitudinal axis.

5. The method of claim 4, wherein each of the first supply channels connects with the first distribution channel at a different angular position about the longitudinal axis of the bore.

6. The method of claim 4, wherein the first distribution channel is a C-shaped channel extending through an arc of between 180°

and 300°

.

7. The method of claim 1, wherein supplying the first reactant vapor comprises vaporizing a solid or liquid.

8. The method of claim 1, wherein supplying the first reactant vapor comprises activating a first reactant vapor valve.

9. The method of claim 8, further comprising supplying an inert gas to the first reactant gas valve.

10. The method of claim 1, further comprising, while the first reactant vapor is not flowing in the bore, supplying a second reactant vapor to the bore such that the second reactant vapor enters the bore at a plurality of angular positions about the longitudinal axis of the bore and at an acute angle with respect to the longitudinal axis of the bore.

11. The method of claim 10, wherein the second reactant vapor enters the bore at a location downstream of where the first reactant vapor entered the bore.