SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

• US 20170125641A1
• Filed: 06/03/2015
• Published: 05/04/2017
• Est. Priority Date: 06/03/2014
• Status: Active Grant

• Current Assignee: Lumens Co., Ltd.
• Original Assignee: Semicon Light Co., Ltd.
• Inventors: JEON, Soo Kun, KIM, Tae Hyun, PARK, Jun Chun, KIM, Tea Jin, KIM, Byeong Seob, KIM, Jong Won, PARK, Ki Man
• Granted Patent: US 10,032,960 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

Disclosed is a semiconductor light emitting device including: multiple semiconductor layers including a first semiconductor layer, a second semiconductor layer, and an active layer; an electrode electrically connected with the multiple semiconductor layers; a light absorption barrier disposed about at least the electrode; and a non-conductive reflective film adapted to cover the multiple semiconductor layers, the light absorption barrier and the electrode and to reflect light from the active layer, wherein the non-conductive reflective film has an abnormal region of a lower reflectivity around the electrode due to a height difference between the light absorption barrier and the electrode, wherein a portion of the non-conductive reflective film exposed from the electrode is made longer than the abnormal region as seen in a cross-sectional view of the electrode.

Claims

1. A semiconductor light emitting device comprising:

multiple semiconductor layers including a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer interposed between the first and second semiconductor layers and adapted to generate light by electron-hole recombination;

an electrode electrically connected with the multiple semiconductor layers;

a light absorption barrier disposed about at least the electrode; and

a non-conductive reflective film adapted to cover the multiple semiconductor layers, the light absorption barrier and the electrode and to reflect light from the active layer, wherein the non-conductive reflective film has an abnormal region of a lower reflectivity around the electrode due to a height difference between the electrode and the vicinity of the electrode;

wherein a portion of the light absorption barrier exposed from the electrode is made longer than the abnormal region as seen in a cross-sectional view of the electrode in order to block the light from the active layer entering the abnormal region.

2. The semiconductor light emitting device according to claim 1, wherein the non-conductive reflective film comprises at least one of a DBR (Distributed Bragg Reflector) and an ODR (Omni-Directional Reflector).

3. The semiconductor light emitting device according to claim 1, wherein the light absorption barrier is a current blocking layer which is interposed between the electrode and the multiple semiconductor layers and has an insulation property.

4. The semiconductor light emitting device according to claim 3, further comprising:

a light transmitting conductive film which is interposed between the light absorption barrier and the electrode, and covers the second semiconductor layer.

5. The semiconductor light emitting device according to claim 4, wherein the non-conductive reflective film comprises one of a DBR (Distributed Bragg Reflector and an ODR (Omni-Directional Reflector),

the electrode has a thickness of 0.5 to 3.0 μ

m, and

the light absorption barrier has a length of 2.0 to 10 μ

m from the lateral face of the electrode.

6. The semiconductor light emitting device according to claim 4, further comprising:

an additional electrode formed on an exposed portion of the first semiconductor layer by etching the second semiconductor layer and the active layer;

first and second pad electrodes formed on the non-conductive reflective film;

a first electrical connection which runs through the non-conductive reflective film and electrically connects the first pad electrode and the additional electrode; and

a second electrical connection which runs through the non-conductive reflective film and electrically connects the second pad electrode and the electrode.

7. The semiconductor light emitting device according to claim 6, wherein the electrode comprises a finger electrode stretching out from below the second pad electrode to below the first pad electrode, and

the light absorption barrier is interposed between the second semiconductor layer and the finger electrode and stretches out along the finger electrode, in correspondence with the abnormal region formed around the finger electrode.

8. The semiconductor light emitting device according to claim 7, wherein the additional electrode comprises an additional finger electrode stretching out from below the first pad electrode to below the second pad electrode, on the first semiconductor layer;

and

the semiconductor light emitting device further comprises an additional light absorption barrier stretching out along the additional finger electrode, in correspondence with the additional abnormal region formed in the non-conductive reflective film in the vicinity of the etched second semiconductor layer and the active layer.

9. The semiconductor light emitting device according to claim 1, wherein the electrode is arranged on an exposed portion of the first semiconductor layer by etching the second semiconductor layer and the active layer, and

the light absorption barrier is interposed between the first semiconductor layer and the electrode.

10. The semiconductor light emitting device according to claim 1, wherein the electrode is arranged on an exposed portion of the first semiconductor layer by etching the second semiconductor layer and the active layer,

the non-conductive reflective film covers the second semiconductor layer and the first semiconductor layer and has an abnormal region created due to a height different resulted from etching, and

the light absorption barrier is formed on the lateral face of the etched exposed second semiconductor layer, on the lateral face of the active layer, and on the first semiconductor layer.

11. The semiconductor light emitting device according to claim 1, further comprising:

a current blocking layer interposed between the electrode and the multiple semiconductor layers; and

a light transmitting conductive film covering the second semiconductor layer,

wherein the light absorption barrier is formed between the light transmitting conductive film and the non-conductive reflective film.

12. The semiconductor light emitting device according to claim 1, wherein the light absorption barrier film has a wedge-shaped end.

13. The semiconductor light emitting device according to claim 1, wherein the lateral face of the electrode is slanted with respect to the light absorption barrier.

14. The semiconductor light emitting device according to claim 1, wherein the electrode is arranged on an exposed portion of the first semiconductor layer by etching the second semiconductor layer and the active layer, with the etched second semiconductor and active layers having faces slanted with respect to the exposed, first semiconductor layer where the electrode is located;

and

the non-conductive reflective film is arranged to cover the second semiconductor layer and the first semiconductor layer and formed along the slanted faces of the etched second semiconductor and active layers.