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SEMICONDUCTOR LIGHT EMITTING APPARATUS AND METHOD OF MANUFACTURING SAME

  • US 20170130909A1
  • Filed: 06/14/2016
  • Published: 05/11/2017
  • Est. Priority Date: 11/05/2015
  • Status: Active Grant
First Claim
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1. A light emitting apparatus comprising:

  • at least one first light source configured to emit white light, the at least one first light source including,at least one light emitting diode (LED) chip configured to emit light having a peak wavelength in a wavelength region of about 440 nm to about 460 nm, andat least one phosphor configured to be excited by light emitted by the at least one LED chip, such that the at least one phosphor emits light having a peak wavelength in a wavelength region of about 490 nm to about 580 nm or a wavelength region of about 580 nm to about 630 nm; and

    at least one second light source configured to emit cyan light having a peak wavelength in a wavelength region of about 460 nm to about 490 nm,wherein the light emitting apparatus is configured to apply a common magnitude of electrical power to each of the at least one first light source and the at least one second light source such that a ratio of luminous flux of the white light emitted by the at least one first light source to luminous flux of the cyan light emitted by the at least one second light source ranges from about 19;

    1 to about 370;

    1.

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