COMPUTER ADDRESSABLE PLASMA DENSITY MODIFICATION FOR ETCH AND DEPOSITION PROCESSES

• US 20170133202A1
• Filed: 11/09/2015
• Published: 05/11/2017
• Est. Priority Date: 11/09/2015
• Status: Abandoned Application

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Berry, III, Ivan L.
• Application Number:
  US14/936,437
• Publication Number:
  US 20170133202A1
• Time in Patent Office: Days
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/511 using microwave discharges
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/3222 Antennas
• CPC Class Codes: H01J 37/32238 Windows
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32899 Multiple chambers, e.g. cluster tools
• CPC Class Codes: H01J 37/32926 Software, data control or modelling
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

Disclosed herein are methods of modifying a reaction rate on a semiconductor substrate in a processing chamber which utilize a phased-array of microwave antennas. The methods may include energizing a plasma in a processing chamber, emitting a beam of microwave radiation from a phased-array of microwave antennas, and directing the beam into the plasma so as to cause a change in a reaction rate on the surface of a semiconductor substrate inside the processing chamber. Also disclosed herein are particular embodiments of phased-arrays of microwave antennas, as well as semiconductor processing apparatuses which include a phased-array of microwave antennas configured to emit a beam of microwave radiation into a processing chamber.

Claims

1-3. -3. (canceled)

4. A phased-array of microwave antennas, comprising 8-256 microwave antennas arranged substantially cylindrically with respect to each other, the height of said cylindrical arrangement being 5-500 mm, and the diameter of said cylindrical arrangement being 300-600 mm.

5. The phased-array of claim 4, wherein the height of said cylindrical arrangement is 100-300 mm, and the diameter of said cylindrical arrangement is 350-450 mm.

6. The phased-array of claim 5, wherein the mean spacing between adjacent antennas is 0.1-150 cm.

7. The phased-array of claim 6, wherein the cylindrical arrangement comprises a stack of several groups of substantially circularly arranged antennas.

8. The phased-array of claim 7, wherein the cylindrical arrangement comprises a stack of 3-7 groups of substantially circularly arranged antennas.

9. A method of modifying a reaction rate on a semiconductor substrate in a processing chamber, the method comprising:

energizing a plasma in a processing chamber;

emitting a beam of microwave radiation from a phased-array of microwave antennas; and

directing the beam into the plasma so as to cause a change in a reaction rate on the surface of a semiconductor substrate inside the processing chamber.

10. The method of claim 9, further comprising:

steering the beam of microwave energy directed into the plasma so as to modify the effect on the density of the plasma.

11. The method of claim 10, wherein steering the beam comprises varying the relative phases of the microwave radiation emitted from two or more of the microwave antennas of the phased-array.

12. The method of claim 11, wherein steering the beam comprises varying the relative phases and magnitudes of the microwave radiation emitted from two or more of the microwave antennas of the phased-array.

15. The method of claim 9, wherein the plasma is an inductively-coupled plasma (ICP).

16. The method of claim 9, wherein the plasma is a capacitively-coupled plasma (CCP).

13. (canceled)

14. (canceled)

17. (canceled)

31. The processing apparatus of claim 17, wherein the processing chamber comprises a dielectric window through which the microwave energy emitted by the phased-array of antennas is transmitted into the chamber.

33. The processing apparatus of claim 31, wherein the dielectric window comprises quartz and/or ceramic.

18. A semiconductor processing apparatus comprising:

a processing chamber;

a substrate holder configured to hold a semiconductor substrate within the processing chamber;

a plasma generator configured to generate a plasma within the processing chamber;

a phased-array of microwave antennas configured to emit a beam of microwave radiation into the chamber; and

a controller having instructions for operating the phased-array microwave antenna to affect the plasma within the processing chamber.

19. The processing apparatus of claim 18, wherein the controller operates the phased-array microwave antennas so as to steer the emitted beam of microwave radiation.

20. The processing apparatus of claim 18, wherein the controller varies the relative phases of the microwave radiation emitted from two or more antennas of the phased-array.

21. The processing apparatus of claim 20, wherein the controller varies the relative phases and magnitudes of the microwave radiation emitted from two or more antennas of the phased-array.

22. The processing apparatus of claim 18, wherein at least some of the antennas are located around the periphery of the processing chamber.

23. The processing apparatus of claim 18, wherein at least some of the antennas are located above the processing chamber.

25. The processing apparatus of claim 18, wherein the plasma generator is configured to generate an inductively-coupled plasma (ICP) and comprises two or more coils connected to one or more power supplies for generating the ICP plasma.

28. The processing apparatus of claim 18, wherein the plasma generator is configured to generate a capacitively-coupled plasma (CCP) and comprises a plate electrode connected to a power supply for applying a voltage difference between the plate electrode and the substrate holder for generating the CCP plasma.

24. (canceled)

26. (canceled)

27. (canceled)

29. (canceled)

30. (canceled)

32. (canceled)

34. (canceled)

35. (canceled)