SEMICONDUCTOR LIGHT-EMITTING DEVICE
First Claim
1. A semiconductor light-emitting device, comprising:
- a P-type semiconductor cladding layer, wherein the P-type semiconductor cladding layer is doped with magnesium;
an N-type semiconductor layer;
a light-emitting layer disposed between the P-type semiconductor cladding layer and the N-type semiconductor layer; and
a hole injection layer disposed between the P-type semiconductor cladding layer and the light-emitting layer, wherein the hole injection layer comprises a first super lattice structure formed by alternately stacking a plurality of magnesium nitride layers and a plurality of semiconductor material layers, a chemical formula of each of the semiconductor material layers is AlxInyGa1-x-yN, and 0≦
x≦
1, 0≦
y≦
1, and 0≦
x+y≦
1.
2 Assignments
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Accused Products
Abstract
A semiconductor light-emitting device including a P-type semiconductor cladding layer, an N-type semiconductor layer, a light-emitting layer, and a hole injection layer is provided. The P-type semiconductor cladding layer is doped with magnesium. The light-emitting layer is disposed between the P-type semiconductor cladding layer and the N-type semiconductor layer. The hole injection layer is disposed between the P-type semiconductor cladding layer and the light-emitting layer. The hole injection layer includes a first super lattice structure formed by alternately stacking a plurality of magnesium nitride layers and a plurality of semiconductor material layers. The chemical formula of each of the semiconductor material layers is AlxInyGa1-x-yN, and 0≦x≦1, 0≦y≦1, and 0≦x+y≦1.
6 Citations
15 Claims
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1. A semiconductor light-emitting device, comprising:
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a P-type semiconductor cladding layer, wherein the P-type semiconductor cladding layer is doped with magnesium; an N-type semiconductor layer; a light-emitting layer disposed between the P-type semiconductor cladding layer and the N-type semiconductor layer; and a hole injection layer disposed between the P-type semiconductor cladding layer and the light-emitting layer, wherein the hole injection layer comprises a first super lattice structure formed by alternately stacking a plurality of magnesium nitride layers and a plurality of semiconductor material layers, a chemical formula of each of the semiconductor material layers is AlxInyGa1-x-yN, and 0≦
x≦
1, 0≦
y≦
1, and 0≦
x+y≦
1. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification