Thin Film Transistor Array Substrate, Manufacturing for the Same, and Liquid Crystal Display Panel Having the Same
First Claim
1. A thin film transistor (TFT) array substrate, comprising a glass substrate and a plurality of TFTs thereon, each TFT comprising:
- a gate formed on the glass substrate, a gate insulating layer covering the gate, an active layer formed on the gate insulating layer, a source on the active layer, and a drain on the active layer, wherein a gap is between the source and the drain in a first direction, an area of the active layer that matches the gap is a channel, and wherein a plurality of protrusions and recesses on a coarse surface of the gate insulating layer face the active layer, at least within the area corresponding to the channel, and the active layer fits with the gate insulting layer.
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Abstract
A thin film transistor array substrate includes a glass substrate and a plurality of TFTs thereon. Each TFT includes a gate formed on the glass substrate, a gate insulating layer covering the gate, an active layer formed on the gate insulating layer, a source on the active layer, and a drain on the active layer. A gap is between the source and the drain in a first direction. An area of the active layer that matches the gap is a channel. A plurality of protrusions and recesses on a coarse surface of the gate insulating layer face the active layer, at least within the area corresponding to the channel. The active layer fits with the gate insulting layer. The present invention also proposes a method for manufacturing the thin film transistor array substrate and a liquid crystal display panel having the thin film transistor array substrate.
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Citations
20 Claims
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1. A thin film transistor (TFT) array substrate, comprising a glass substrate and a plurality of TFTs thereon, each TFT comprising:
- a gate formed on the glass substrate, a gate insulating layer covering the gate, an active layer formed on the gate insulating layer, a source on the active layer, and a drain on the active layer, wherein a gap is between the source and the drain in a first direction, an area of the active layer that matches the gap is a channel, and wherein a plurality of protrusions and recesses on a coarse surface of the gate insulating layer face the active layer, at least within the area corresponding to the channel, and the active layer fits with the gate insulting layer.
- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 10, 11, 12, 13)
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9. A method of manufacturing a thin film transistor (TFT) substrate, comprising:
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(S101) providing a glass substrate and forming a gate on the glass substrate; (S102) forming a gate insulating layer covering the gate; (S103) forming a coarse surface on the gate insulting layer, with a plurality of protrusions and a plurality of recesses, by embossing or etching processes; (S104) forming an active layer on the gate insulting layer, where a surface of the active layer fits the gate insulting layer; and (S105) forming a source and drain on the active layer.
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14. A liquid crystal display (LCD) panel comprising an array substrate, a color filter substrate, and liquid crystal layer therebetween, the array substrate comprising a glass substrate and a plurality of thin film transistors (TFTs) thereon, each TFT comprising:
- a gate formed on the glass substrate, a gate insulating layer covering the gate, an active layer formed on the gate insulating layer, a source on the active layer, and a drain on the active layer, wherein a gap is between the source and the drain in a first direction, an area of the active layer that matches the gap is a channel, and wherein a plurality of protrusions and recesses on a coarse surface of the gate insulating layer face the active layer, at least within the area corresponding to the channel, and the active layer fits with the gate insulting layer.
- View Dependent Claims (15, 16, 17, 18, 19, 20)
Specification