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Butted Body Contact for SOI Transistor

  • US 20170141134A1
  • Filed: 11/18/2015
  • Published: 05/18/2017
  • Est. Priority Date: 11/18/2015
  • Status: Abandoned Application
First Claim
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1. A field-effect transistor (FET) comprising:

  • a drain region having a first conductivity type;

    a source region having the first conductivity type;

    a gate polysilicon structure defining a body region, the body region having a second conductivity type;

    at least one body contact region of the second conductivity type in contact with the source region and separate from the body region;

    and at least one body tab of the second conductivity type in contact with the body region and the at least one body contact region, configured to electrically connect the at least one body contact region to the body region.

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