UPDATING READ VOLTAGES
First Claim
1. A data storage device comprising:
- a non-volatile memory;
a read voltage update engine configured to generate first representations of data read from a logical page of the non-volatile memory according to multiple values of a first read voltage and multiple values of a second read voltage and to select a value of the first read voltage and a value of the second read voltage based on the first representations;
a hard bit generator configured to emulate reading the data from the non-volatile memory according to the selected values of the first read voltage and the second read voltage to generate a hard bits corresponding to the data; and
a soft bit generator configured to generate soft bits at least partially based on a second representation of the data, the second representation of the data generated to emulate reading the data from the non-volatile memory according to second values of the first read voltage and the second read voltage that are offset from the selected values of the first read voltage and the second read voltage.
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Accused Products
Abstract
A method performed in a data storage device includes reading first representations of data from a non-volatile memory according to multiple sets of read voltages. A first set of read voltages are selected based on the first representations. The method also include generating reliability information that is based on a first generated representation of the data and a second generated representation of the data. The first generated representation of the data corresponds to reading the data from the non-volatile memory according to the first set of read voltages, and the second generated representation of the data corresponds to reading the data from the non-volatile memory according to a second set of read voltages that are offset from the first set of read voltages.
81 Citations
20 Claims
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1. A data storage device comprising:
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a non-volatile memory; a read voltage update engine configured to generate first representations of data read from a logical page of the non-volatile memory according to multiple values of a first read voltage and multiple values of a second read voltage and to select a value of the first read voltage and a value of the second read voltage based on the first representations; a hard bit generator configured to emulate reading the data from the non-volatile memory according to the selected values of the first read voltage and the second read voltage to generate a hard bits corresponding to the data; and a soft bit generator configured to generate soft bits at least partially based on a second representation of the data, the second representation of the data generated to emulate reading the data from the non-volatile memory according to second values of the first read voltage and the second read voltage that are offset from the selected values of the first read voltage and the second read voltage. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of reading data, the method comprising:
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in a data storage device including a controller and a non-volatile memory, performing; reading first representations of data from a logical page in the non-volatile memory according to multiple sets of read voltages, wherein each of the sets of read voltages includes a first value of a first read voltage and a second value of a second read voltage; storing the first representations of the data in a memory; selecting, based on the first representations, a first set of read voltages including a first value of the first read voltage and a first value of the second read voltage; and generating reliability information corresponding to the data, the reliability information based on a first generated representation of the data and a second generated representation of the data, wherein the first generated representation of the data corresponds to reading the data from the non-volatile memory according to the first set of read voltages and wherein the second generated representation of the data corresponds to reading the data from the non-volatile memory according to a second set of read voltages that are offset from the first set of read voltages. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. An apparatus comprising:
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means for storing data; means for storing first representations of the data, the first representations of data read from a logical page of the means for storing according to multiple sets of read voltages, wherein each of the sets of read voltages includes a first value of a first read voltage and a second value of a second read voltage; means for selecting a first set of read voltages including a first value of the first read voltage and a first value of the second read voltage based on the first representations; and means for generating reliability information based on a first generated set of bits corresponding to reading the data from the means for storing according to the first set of read voltages and based on a second generated set of bits corresponding to reading the data from the means for storing according to a second set of read voltages that are offset from the first set of read voltages. - View Dependent Claims (19, 20)
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Specification