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THREE-DIMENSIONAL NAND DEVICE CONTAINING SUPPORT PEDESTAL STRUCTURES FOR A BURIED SOURCE LINE AND METHOD OF MAKING THE SAME

  • US 20170148810A1
  • Filed: 08/01/2016
  • Published: 05/25/2017
  • Est. Priority Date: 11/20/2015
  • Status: Active Grant
First Claim
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1. A three-dimensional memory device comprising:

  • an alternating stack of electrically conductive layers and insulating layers located over a substrate;

    an array of memory stack structures, each memory stack structure extending through the alternating stack and including a memory film and a semiconductor channel laterally surrounded by the memory film; and

    support structures located between the alternating stack and the substrate.

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