Nitride Light Emitting Diode

• US 20170148948A1
• Filed: 02/03/2017
• Published: 05/25/2017
• Est. Priority Date: 01/12/2015
• Status: Abandoned Application

• Current Assignee: Xiamen Sanan Optoelectronics Technology Company Limited (Sanan Optoelectronics Company Limited)
• Original Assignee: Xiamen Sanan Optoelectronics Technology Company Limited (Sanan Optoelectronics Company Limited)
• Inventors: HSU, Chen-ke, ZHENG, Jinjian, XUN, Feilin, LI, Zhiming, DENG, Heqing, DU, Weihua, WU, Mingyue, CHOU, Chilun, LIN, Feng, LI, Shuiqing, KANG, Junyong
• Application Number:
  US15/424,765
• Publication Number:
  US 20170148948A1
• Time in Patent Office: Days
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/325 characterised by the doping materials

Abstract

A nitride light emitting diode includes: an n-type nitride layer, a light emitting layer and a p-type nitride layer in sequence, wherein, the light emitting layer is a MQW structure composed of a barrier layer and a well layer, in which, an AlGaN electron tunneling layer is inserted into at least one well layer closing to the n-type nitride layer with barrier height greater than that of the barrier layer; in addition, the barriers of the AlGaN electron tunneling layer and the well layer are high enough so that electrons are difficult to transit towards thermionic emission direction, but mainly transit through tunneling in the InGaN well layers, which confines electron mobility and adjusts electron distribution. Hence, electrons have less chance to spill over into the P-type nitride layer.

Claims

1. A nitride light emitting diode, comprising:

an n-type nitride layer;

a light emitting layer; and

a p-type nitride layer;

wherein;

the light emitting layer comprises a multiple quantum well (MQW) structure including a barrier layer and a well layer;

an AlGaN electron tunneling layer is inserted into at least one well layer adjacent to the n-type nitride layer with a barrier height greater than a height of the barrier layer;

a potential barrier height difference between the well layer and the AlGaN electron tunneling layer is sufficiently high such that electrons are difficult to transit through thermionic emission, but mainly transit through tunneling.

2. The nitride light emitting diode according to claim 1, wherein:

the AlGaN electron tunneling layer is inserted into a middle of first M-pair quantum wells adjacent to the n-type nitride layer, where 20>

M≧

1.

3. The nitride light emitting diode according to claim 1, wherein:

a single AlGaN electron tunneling layer or a plurality of AlGaN electron tunneling layers are inserted into the well layers in the first M-pair quantum wells.

4. The nitride light emitting diode according to claim 1, wherein the well layer in the MQW structure is an InGaN layer.

5. The nitride light emitting diode according to claim 1, wherein Al-composition x in the AlGaN electron tunneling layer is:

1>

x≧

0.3.

6. The nitride light emitting diode according to claim 1, wherein the AlGaN electron tunneling layer has a thickness of 1 Å

-50 Å

.

7. The nitride light emitting diode according to claim 1, wherein the AlGaN electron tunneling layer is Si doped.

8. The nitride light emitting diode according to claim 7, wherein a Si doping concentration of the AlGaN electron tunneling layer is 1.0×

10¹⁹-2.0×

10²⁰ cm<sup>−

3</sup>.

9. The nitride light emitting diode according to claim 7, wherein the Si doping of the AlGaN electron tunneling layer is delta doping.

10. The nitride light emitting diode according to claim 1, further comprising a p-type Al_xIn_yGa_1-x-yN electron blocking layer, where 0.2>

x>

0.

11. The nitride light emitting diode according to claim 10, wherein a Mg doping concentration of the p-type Al_xIn_yGa_1-x-yN electron blocking layer is 5×

10¹⁸-5×

10²⁰ cm<sup>−

3</sup>.

12. A light-emitting system comprising a plurality of nitride light emitting diodes (LEDs), each LED comprising:

an n-type nitride layer;

a light emitting layer; and

a p-type nitride layer;

wherein;

the light emitting layer comprises a multiple quantum well (MQW) structure including a barrier layer and a well layer;

an AlGaN electron tunneling layer is inserted into at least one well layer adjacent to the n-type nitride layer with a barrier height greater than a height of the barrier layer;

a potential barrier height difference between the well layer and the AlGaN electron tunneling layer is sufficiently high such that electrons are difficult to transit through thermionic emission, but mainly transit through tunneling.

13. The system of claim 12, wherein:

the AlGaN electron tunneling layer is inserted into a middle of first M-pair quantum wells adjacent to the n-type nitride layer, where 20>

M≧

1.

14. The system of claim 12, wherein:

a single AlGaN electron tunneling layer or a plurality of AlGaN electron tunneling layers are inserted into the well layers in the first M-pair quantum wells.

15. The system of claim 12, wherein the well layer in the MQW structure is an InGaN layer.

16. The system of claim 12, wherein Al-composition x in the AlGaN electron tunneling layer is:

1>

x≧

0.3.

17. The system of claim 12, wherein the AlGaN electron tunneling layer has a thickness of 1 Å

-50 Å

.

18. The system of claim 12, wherein the AlGaN electron tunneling layer is Si doped.

19. The system of claim 18, wherein a Si doping concentration of the AlGaN electron tunneling layer is 1.0×

10¹⁹-2.0×

10²⁰ cm<sup>−

3</sup>.

20. The system of claim 19, wherein the Si doping of the AlGaN electron tunneling layer is delta doping, each LED further comprising a p-type Al_xIn_yGa_1-x-yN electron blocking layer, where 0.2>

x>

0, wherein a Mg doping concentration of the p-type Al_xIn_yGa_1-x-yN electron blocking layer is 5×

10¹⁸-5×

10²⁰ cm<sup>−

3</sup>.