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CONTROLLER-BASED MEMORY SCRUB FOR DRAMS WITH INTERNAL ERROR-CORRECTING CODE (ECC) BITS CONTEMPORANEOUSLY DURING AUTO REFRESH OR BY USING MASKED WRITE COMMANDS

  • US 20170161143A1
  • Filed: 12/08/2015
  • Published: 06/08/2017
  • Est. Priority Date: 12/08/2015
  • Status: Active Grant
First Claim
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1. A method for updating a DRAM memory array, said method comprising:

  • a) transitioning the DRAM memory array from an idle state to a refresh state in accordance with a command from a memory controller;

    b) initiating a refresh on the DRAM memory array using DRAM internal control circuitry by activating a row of data into an associated sense amplifier buffer;

    c) during the refresh, performing an Error Correction Code (ECC) scrub operation of selected bits in the activated row of the DRAM memory array, wherein the ECC scrub operation comprises performing a virtual read and write operation; and

    d) updating a refresh column counter.

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