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LOW-DAMAGE ETCHING METHOD FOR III-NITRIDE

  • US 20170162398A1
  • Filed: 03/03/2016
  • Published: 06/08/2017
  • Est. Priority Date: 12/02/2015
  • Status: Abandoned Application
First Claim
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1. A low-damage etching method for a III-Nitride structure, comprising:

  • forming an etching mask on the III-Nitride structure, which is formed on a substrate;

    etching the III-Nitride with the etching mask, andincreasing a temperature of the substrate stepwisely, wherein for a time interval that corresponds to each temperature step of the substrate, the etching is restricted to a period that occurs earlier than or later than the time interval.

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