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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

  • US 20170162563A1
  • Filed: 06/08/2015
  • Published: 06/08/2017
  • Est. Priority Date: 08/06/2014
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate;

    a plurality of trenches provided in an upper surface of the semiconductor substrate;

    trench insulating films each covering a corresponding one of inner surfaces of the trenches;

    trench electrodes each provided in a corresponding one of the trenches and insulated from the semiconductor substrate by the trench insulating film;

    a first semiconductor layer of a first conductivity type provided in the semiconductor substrate in a first range interposed between adjacent two of the trenches, exposed on the upper surface of the semiconductor substrate, and being in contact with the trench insulating film;

    a second semiconductor layer of a second conductivity type provided in the semiconductor substrate in the first range, a part of the second semiconductor layer being exposed on the upper surface of the semiconductor substrate, and the second semiconductor layer being in contact with the trench insulating film on a lower side of the first semiconductor layer;

    a third semiconductor layer of the first conductivity type provided in the semiconductor substrate, provided on a lower side of the second semiconductor layer, separated from the first semiconductor layer by the second semiconductor layer, and being in contact with the trench insulating film on the lower side of the second semiconductor layer;

    an interlayer insulating film provided on the upper surface of the semiconductor substrate and on the trench electrodes, and comprising a plurality of contact holes provided in the first range;

    first conductor layers each provided in a corresponding one of the contact holes and connected to at least one of the first semiconductor layer and the second semiconductor layer; and

    a surface electrode provided on the first conductor layers and the interlayer insulating film and connected to each of the first conductor layers,whereineach of the contact holes extends parallel to the trenches, andthe contact holes are arranged in a width direction of the first range with intervals.

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